本論文中以奈米結構強化(Nanostructured strengthening)單晶矽強度的方法，透過拉曼光譜技術量測微觀應力分佈，藉以瞭解表面奈米結構對內部應力分佈的影響，推論強化的原因；結果顯示，首先，由單一光點量測可以得到拉曼訊號與外施函力成正比，且奈米結構詴片有顯著的強化現象，其次，由單軸掃描得到微觀應力分佈，在四點抗彎測詴的條件下，均勻應力區保持均勻不變，而線性下降應力區仍然呈現線性的下降，同時不因奈米結構處理改變材料脆性行為，以曲線配適法可得到相同的驗證，推論矽塊材(Bulk)本身為主要受應力的區域，歸納出強化機制是由於拋光矽內部缺陷受到奈米結構處理移除與抑制應力集中所至。

This article focuses on the bending strength of single crystal Silicon. The bending strength of single crystal silicon was improved by using a Nanostructured strengthening method, but the mechanism of nanistructured strengthening is still unclear. Micro-Raman spectroscopy can be used to detect the micro-scale stress distribution of nanostructured Si. Therefore, the purpose of this dissertation is to resolve the mechanism of strengthening by Micro-Raman spectroscopy.

Two Raman results were showed in this dissertation, Firstly, the Raman shift was positively proportional to the applied loading force. The maximum loading force applied on the nanostructured sample was larger than the maximum loading force of the polished sample. Secondly, a Raman mapping on the micro-scale stress distribution of Si under the 4-point-bending test shows linear relations in the uniform stress region and also the non-uniform stress region. It means that mechanical behavior of the Si sample doesn’t change with the nanostructure. It is clear that the bulk of Si is the main loading region. Based onthe experimental results, we can conclude that the initial defects and the stress concentration can be restrained by the nanostructure.

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