CsCl有序結構的FeRh合金在室溫時為反鐵磁相，加熱至約370 K時發生反鐵磁相轉變為鐵磁相之第一磁相變，此磁相變會伴隨著體積的增加、電阻及巨大磁熵的變化。本研究利用磁控濺鍍，雙層鍍膜方式來製備鐵銠薄膜，選用MgO作為基板，藉由改變鐵與銠的鍍膜順序、退火時間、及鍍膜的功率與時間，比較不同條件下鐵銠薄膜的成分與結構的變化。利用X光繞射、X光反射率量測鐵銠薄膜，來分析其晶體結構、序化程度、厚度、表面粗糙度。在此實驗中發現鐵與銠的鍍膜順序會影響FeRh的成長，Rh/Fe/MgO的樣品經過退火後，能形成結晶性良好的FeRh磊晶薄膜，Fe/Rh/MgO的樣品經過退火後，形成FeO/FeRh/Rh/MgO的結構，且形成FeRh的比例很少，原因還需探討與釐清。

The ordered FeRh alloys with the CsCl structure are antiferromagnetic phase at room temperature. When FeRh alloys are heated to about 370 K, the first order magnetic phase transition from antiferromagnetic to ferromagnetic states occurs. This magnetic phase transition is accompanied by an increase in volume, a large change in the resistivity and entropy. In this study, FeRh thin films were prepared by magnetron sputtering with bilayer deposition method on MgO(001) substrates. The composition and structure of FeRh thin film were compared by changing the deposition order of Fe and Rh, the annealing time, the sputtering power and deposition time. The structure, order parameter, thickness and roughness of FeRh thin films were analyzed by XRD and XRR. In this experiment, the deposition order of Fe and Rh affects the growth of FeRh thin films tremendously. After annealing, Rh/Fe/MgO samples form epitaxial FeRh thin films with good crystallinity. However, Fe/Rh/MgO samples form FeO/FeRh/Rh/MgO structure with very less proportion of FeRh after annealing. The reason of this phenomenon is needed to be investigated in the future.

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