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研究生： 劉映吾
論文名稱： 以化學氣相沉積法成長石墨烯之研究
The Fabrication and Characterization of Chemical Vapor Deposited Graphene
指導教授： 陳正中
口試委員: 齊正中
林大欽
學位類別： 碩士
Master
系所名稱： 理學院 - 物理學系
Department of Physics
論文出版年： 2013
畢業學年度： 101
語文別： 中文
論文頁數： 80
中文關鍵詞： 石墨烯 、化學氣相沉積
相關次數： 點閱：79  下載：0 
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    • 此論文的目的是針對我們實驗室內建構一套完整的系統，以成長高品質的單層石墨烯（Graphene），並使用各種不同的鑑定方式來判斷樣品的品質。單層石墨烯是一種單由碳元素組成的薄膜材料，厚度很小，被視為極佳的二維材料。由於其特殊的六角晶格結構，造成它的能帶結構也十分特殊，因而展現特別優異的傳輸特性，以及許多二維空間下特有的物理性質。
    在這篇論文中，我們使用化學氣相沉積法來成長石墨烯薄膜。並利用光學顯微鏡、拉曼光譜儀做為初步判斷樣品品質的工具。另外，為了作更深入的基礎物理研究，我們將石墨烯樣品轉移至長有二氧化矽層的高摻雜矽基板上，把薄膜製作成霍爾元件，並進行電性量測。一般以化學氣相沉積法成長石墨烯的製程中，這種轉移過程是影響其基本特性表現很重要的一項步驟。因此在文中，我們針對「轉移石墨烯」這個製程，也提出一些想法，並進行實驗，嘗試改善樣品的品質。
    建立化學氣相沉積的成長參數，與嘗試不同的轉移方法之後，我們利用量測石墨烯樣品的電性，更進一部分析微觀下製程對於樣品傳輸特性的影響。再根據文獻的理論計算，解釋所量測到的電性行為。實驗結果顯示，我們對轉移製程的調整很有機會改善樣品中帶電雜質的問題。此外，我們認為藉著此次的分析的經驗，未來將有機會完成一套數值分析方法，對電性量測的數據作定量分析。

    第一章 　緒論 1.1 單層石墨烯 ....................................................................................................... 6 1.1.1 晶格結構 .............................................................................................. 6 1.1.2 電子的能帶結構 ................................................................................. 8 1.2 單層石墨烯的電性特色 .................................................................................. 9 1.2.1 迪拉克費米子 ..................................................................................... 9 1.2.2 電荷中性點 ........................................................................................ 10 1.2.3 雙極性場效應 .................................................................................... 11 1.3 單層石墨烯的判斷方式 ................................................................................. 11 1.3.1 光學顯微鏡 ........................................................................................ 11 1.3.2 拉曼光譜儀 ........................................................................................ 12 1.3.3 原子力顯微鏡 .................................................................................... 16 1.3.4 電性量測 ............................................................................................. 16 第二章　化學氣相沉積法成長單層石墨烯 ............................................................... 17 　　2.1 單層石墨烯的製備方式 ................................................................................. 18 　　　　2.1.1 機械剝離法 ........................................................................................... 18 　　　　2.1.2 化學剝離法 ........................................................................................... 18 　　　　2.1.3 磊晶成長法 ........................................................................................... 20 2.1.4 化學氣相沉積法 ................................................................................... 20 2.1.5 選擇CVD製程的原因 ......................................................................... 21 　　2.2 化學氣相沉積法（CVD）製備單層石墨烯 .................................................. 22 2.2.1 CVD 機制 .............................................................................................. 22 2.2.2 CVD 石墨烯的成長機制 .................................................................... 23 　　　　2.2.3 金屬基板 ............................................................................................... 23 　　　　2.2.4 CVD石墨烯的銅製程 .......................................................................... 26 2.3 CVD機台配置與成長參數 .......................................................................... 27 　　　　2.3.1 基台配置與製程參數 .......................................................................... 27 　　　　2.3.2 調變CVD石墨烯的成長參數 ............................................................ 29 　　　　2.3.3 成長CVD石墨烯所遇到的問題 ........................................................ 30 第三章　元件製作 ......................................................................................................... 32 　　3.1 石墨烯轉移 .................................................................................................... 32 　　　　3.1.1 石墨烯轉移方法 .................................................................................. 32 　　　　3.1.2 石墨烯轉移問題一：下層石墨烯殘留 ............................................ 34 　　　　3.1.3 石墨烯轉移問題二：來自蝕刻液的雜質殘留 .................................. 36 　　　　3.1.4 結論 ........................................................................................................ 39 3.2 霍爾元件之設計 .............................................................................................. 41 　　　　3.2.1 霍爾效應 ............................................................................................... 41 　　　　3.2.2 四點量測 ............................................................................................... 43 3.2.3 霍爾元件 ............................................................................................... 44 　　3.3 製作霍爾元件 .................................................................................................. 44 第四章　電性量測 ......................................................................................................... 46 　　4.1 迪拉克錐（Dirac cone）..................................................................................... 46 4.1.1 電荷中性點平移 .................................................................................. 46 4.1.2 雜質濃度 ............................................................................................... 47 4.2 物質隨溫度變化的電性行為 ......................................................................... 49 4.2.1 非導體行為 ........................................................................................... 50 4.2.2 金屬行為 ............................................................................................... 50 　　4.3 石墨烯隨溫度變化的電性行為 ..................................................................... 51 4.3.1 石墨烯的非導體行為 ............................................................................ 51 4.3.2 石墨烯的金屬行為 ................................................................................ 53 4.3.3 石墨烯的非單一行為 ............................................................................ 54 　　4.4 隨載子濃度變化的電性行為 ......................................................................... 54 　　4.5 載子遷移率影響電性行為 ............................................................................. 56 4.6 實驗結果與討論 .............................................................................................. 56 第五章　總結與未來展望 ............................................................................................. 59 附錄一、CVD SOP ............................................................................................................ 61 附錄二、轉移CVD石墨烯 .......................................................................................... 73 參考文獻 .......................................................................................................................... 77

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