利用能量平衡模式研究氮化鈦/鈦雙層薄膜之應力釋放機制

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研究生：	林鵬文 Lin, Peng-Wen
論文名稱：	利用能量平衡模式研究氮化鈦/鈦雙層薄膜之應力釋放機制 Study of stress relief mechanism in TiN/Ti bilayer thin film using energy balance model
指導教授：	黃嘉宏 Huang, Jia-Hong
口試委員:	呂福興 Lu, Fu-Hsing 張銀祐 Chang, Yin-Yu 藍貫哲 Lan, Kuan-Che
學位類別：	碩士 Master
系所名稱：	原子科學院 - 工程與系統科學系 Department of Engineering and System Science
論文出版年：	2021
畢業學年度：	109
語文別：	英文
論文頁數：	94
中文關鍵詞：	氮化鈦薄膜、鈦介層、殘留應力、應力釋放、彈性儲存能
外文關鍵詞：	TiN, Ti interlayer, Residual stress, Stress relief, Stored energy
相關次數：	點閱：108 下載：0
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本研究目的在探討金屬介層厚度對於硬膜應力釋放的影響。我們提出能量平衡模式用以探究金屬介層釋放應力之機制，其核心概念是以金屬介層的塑性變形功平衡硬膜中的彈性儲存能與矽基板的彎曲能。此模型並提出有效變形厚度來探討介層釋放應力之機制，此厚度可分為兩部分，有效變形厚度(硬膜)為金屬介層因釋放上層硬膜應力而塑性變形之厚度；而有效變形厚度(矽)則表示金屬介層因緩解基材彎曲而塑性變形之厚度。本研究選擇具有鈦介層的氮化鈦硬膜作為模型系統，並使用非平衡磁控濺鍍鍍製於矽基板上。實驗設計介層厚度介於50至300奈米，而上層薄膜應力則介於-2.39至-3.93GPa之間。試片的整體應力由光學曲率法量測，而氮化鈦層與鈦介層的應力則利用平均X光應變結合奈米壓印法分別量測。實驗結果顯示，介層塑性變形僅發生於靠近氮化鈦和鈦介層間的介面附近；因此可用於釋放氮化鈦層應力之鈦介層變形厚度有上限值，亦即增加介層厚度並不能降低更多應力。另一方面，厚度不足的鈦介層(低於50奈米)會因氮化鈦層與矽基板包夾之塑性限制，使其塑性變形能力降低，導致介層受到壓應力，使得介層無法有效地釋放薄膜應力；由於應力狀態改變，能量平衡模式不適用於此條件下的金屬介層。因此，金屬介層中之應力狀態可作為介層有效性的參考指標。具有拉伸應力狀態的介層可釋放鍍層之應力，然而當介層已受到壓應力時，即失去釋放應力的能力。

The purpose of this study was to investigate the effect of metal interlayer thickness on relief of residual stress in bilayer coatings. An energy balance model was proposed to facilitate the understanding the stress relief mechanism of the metal interlayer. The model is based on a concept that stored elastic energy in the coating and the bending energy in the substrate are balanced by the plastic work done by the metal interlayer. The effective deformation thickness (EDT) in the Ti interlayer was proposed to understand the stress relief mechanism. EDT includes the deformed interlayer thickness contributed to stress relief of the TiN coating (EDTf), and the deformed interlayer thickness contributed to bending curvature relaxation of the Si substrate (EDTSi). TiN/Ti bilayer thin films were selected as the model system. TiN/Ti specimens with different interlayer thicknesses ranging from 50 to 300 nm and with designed stresses of TiN film ranging from -2.39 to -3.93 GPa were prepared using unbalanced magnetron sputtering. The overall stress of the bilayer specimen was determined by laser curvature method, and the stress in each layer was measured by average X-ray strain method. The experimental results showed that there is an upper limit of Ti interlayer thickness for effectively relieving stress in the TiN thin film. Further increasing the interlayer thickness cannot increase the extent of stress relief. The plastic deformation due to the energy relief in the TiN film only occurs within a specific distance near the TiN/Ti interface. For the specimen with insufficient Ti interlayer thickness ( ≤ 50 nm), the stress of the TiN film was not effectively relieved. The thin interlayer is under plastic constraint by the TiN film and Si substrate, and hence the capacity of plastic deformation of the interlayer is limited, leading to the compressive stress in Ti interlayer. The proposed energy balance model is not valid in this case. The residual stress state of the Ti interlayer can be used as an index to evaluate the effectiveness in relieving film stress by the interlayer. The interlayer is operative by sustaining tensile stress, whereas it is ineffective if the interlayer is subjected to compressive stress.

摘要    i
Abstract    ii
致謝    iii
Content    v
List of Figures    vii
List of Tables    ix
Chapter 1    Introduction    1
Chapter 2    Literature Review    3
2.1    Residual stress in thin films    3
2.2    The effect of metal interlayer    4
2.3    Characteristics of TiN    6
2.4    Measurement methods for thin film residual stress    7
2.4.1    Wafer curvature measurement    7
2.4.2    Grazing incident XRD cos2αsin2ψ method    8
2.4.3    Average X-ray strain (AXS) method    10
Chapter 3    Theoretical basis    12
3.1    Stored elastic energy    12
3.2    Stored energy relief in the film and the substrate    12
3.3    The work done by plastic deformation of the interlayer    13
Chapter 4    Experimental details    18
4.1    Substrate preparation and film deposition    18
4.2    Characterization of structure and chemical compositions    22
4.2.1    Chemical compositions    22
4.2.2    Crystal structure    23
4.2.3    Surface morphology and cross-sectional observation    24
4.2.4    Surface roughness    24
4.3    Characterization of properties    25
4.3.1    Hardness and Young’s modulus    25
4.3.2    Residual stress    25
4.3.3    Electrical Resistivity    28
Chapter 5    Results    31
5.1    Characterization of T-series specimens    31
5.1.1    Chemical compositions    33
5.1.2    Crystal structure    33
5.1.3    Microstructure    36
5.1.4    Surface roughness    38
5.1.5    Hardness, Young’s modulus and electrical resistivity    39
5.1.6    Residual stress    39
5.2    Characterization of B- and TB-series specimens    43
5.2.1    Chemical compositions and crystal structure    45
5.2.2    Microstructure    48
5.2.3    Surface roughness    50
5.2.4    Hardness, Young’s modulus and electrical resistivity    51
5.2.5    Residual stress    51
5.3    Energy balance model    54
5.3.1    Energy relief in the coating (Gf) and the bending relaxation of the substrate (GSi)    54
5.3.2    Maximum plastic work of the interlayer and the total energy relief efficiency(ξtot)    59
Chapter 6    Discussion    61
6.1    Effect of Ti interlayer thickness    61
6.2    Effect of stress variation in the TiN top layer    68
6.3    Applications on the interlayer design    70
Chapter 7    Conclusions    71
Reference    72
Appendix A     XPS Spectra    78
Appendix B     AFM images of the Ti film    90
Appendix C     AXS Linear Regression Fitting    91

                                

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