本論文研究係探討在離子劈裂技術中，以先進的兩階段氫氦離子佈植來取代傳統的單階段氫離子佈植，並利用精進的動態光學顯微分析技術，觀察其佈植於矽（100）靶材，並隨著後續熱退火處理製程，所引發的表面發泡與發泡破裂現象，藉以瞭解氫與氦離子在其中所扮演的角色，並提供以離子劈裂技術來製作絕緣體上矽結構中，如何選定離子佈植條件的重要參考。本論文研究所使用的特性量測分析儀器包括：拉曼光譜儀、二次離子質譜儀、穿透式電子顯微鏡、以及原子力顯微鏡。研究結果顯示：氫氦離子佈植的先後順序以及通量分配百分比，因其影響輻射損傷的多寡以及輻射損傷的分布情形，是為引發矽靶材表面發泡與發泡破裂的重要因素。在不同順序的氫氦離子佈植中，以氦先佈植（即 He++H+）的佈植條件，是為製作絕緣體上矽結構的較佳製程。並且在總佈植通量相同的條件之下，使用較多的氫離子佈植通量，對於製作絕緣體上矽具有實質的助益。以 He++H+ 佈植試片實際製作絕緣體上矽結構時更發現，入射氦離子對於幫助佈植試片製成絕緣體上矽的效益，並不如幫助形成發泡破裂般的等效，換言之，入射的氦離子雖然能有效地幫助矽靶材引發表面發泡與發泡破裂，然而對於幫助成功製成絕緣體上矽材料的效果卻相當有限。即使如此，兩階段氫氦離子佈植卻明顯地降低成功製成絕緣體上矽結構所需的氫離子通量的臨界值。

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