本研究採用反應式電子束蒸鍍（Reactive Electron Beam Evaporation, REBE）
技術，嘗試重現馬里蘭大學實驗室團隊發表之氮化鈦（TiN）薄膜製程 [1]。透
過精確調控電子束電流、氮氣（N₂）流量，並將鍍膜腔體壓力控制於5.0×10⁻⁵至
5.5×10⁻⁵ Torr之間，成功在高真空環境下製備出具強無序性及高動能電感（Kinetic
Inductance）的TiN超導薄膜。實驗中穩定重現地獲得常態片電阻約為40~46Ω/□，
對應之動能電感高達16~18pH/□。
利用 JEOL JSM-7000F 場發射掃描式電子顯微鏡（SEM）之能量散射 X 光
光譜儀（EDS）分析薄膜的元素組成比例，顯示部分樣品之氮鈦比例穩定且接
近理想之 1:1，證實 REBE 法具有優異的化學反應效率以及低氧摻雜特性。進一
步透過四點探針低溫量測（最低溫達 1.6 K）取得薄膜之臨界溫度（TC），結果
顯示各樣品之TC皆落在 3.2~3.89 K 範圍內，相較於原馬里蘭實驗室之 0.77 K 顯
著提升。
相較於原子層沉積（ALD）法 [2]，本研究之 REBE 製程明顯提升薄膜的
無序性並有效提升動能電感，片電感值最高可超越傳統 ALD 法所製 TiN 薄膜
約十倍；且相較於馬里蘭實驗室文獻，本製程能穩定製備更高TC之 TiN 薄膜。
這些特性使 REBE 技術更適用於製作高阻抗共振腔、fluxonium 量子位元及微波
量子元件。本研究成果未來可透過調整幾何圖案設計及製程參數，進一步提升
薄膜元件的品質因子（Q）及量子相干時間（T₂），拓展其在量子資訊科技領域
之應用潛力。

In this study, we employed reactive electron-beam evaporation (REBE) to
reproduce and further develop a fabrication method previously reported by the
University of Maryland group [1] (Mencia ,Yen-Hsiang Lin ,Vladimir Manucharyan,
et al., J. Appl. Phys. 130, 225109, 2021)for highly disordered superconducting titanium
nitride (TiN) thin films. By precisely controlling the electron-beam current, nitrogen
(N₂) gas flow, and deposition chamber pressure (maintained between 5.0×10⁻⁵ and
5.5×10⁻⁵ Torr), we reproducibly obtained TiN films exhibiting a normal-state sheet
resistance of approximately 40–46 Ω/□ and high kinetic inductance ranging from 16
to 18 pH/□.
Elemental analyses performed using energy-dispersive X-ray spectroscopy (EDS)
integrated with a JEOL JSM-7000F field-emission scanning electron microscope (SEM)
revealed a stable and nearly stoichiometric N/Ti ratio (~1:1), indicating excellent
nitridation efficiency and minimal oxygen incorporation. Four-point probe
measurements at cryogenic temperatures down to 1.6 K showed superconducting
critical temperatures (TC) consistently ranging between 3.2 K and 3.89 K, significantly
higher than the previously reported value of 0.77 K.
Compared to atomic layer deposition (ALD) [2], the REBE technique substantially
enhanced film disorder and kinetic inductance, achieving values up to tenfold higher
than conventional ALD grown TiN. Furthermore, our method produced higher TC
films compared to the original Maryland study, making REBE-grown TiN particularly
suitable for applications in high-impedance resonators, fluxonium qubits, and
microwave quantum circuits. Future optimization of geometric designs and deposition
parameters is expected to further improve device quality factors (Q) and quantum
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coherence times (T₂), expanding their potential for quantum information technology.