多晶矽薄膜製程研究及光學性質之研究｜國立清華大學博碩士論文庫

簡易檢索 / 詳目顯示

回結果列表

研究生：	吳宗修 Zong-Xiu Wu
論文名稱：	多晶矽薄膜製程研究及光學性質之研究 Study on the Process and Optical Properties of Poly-Si Thin Film
指導教授：	趙煦 Shiuh Chao
口試委員:
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 光電工程研究所 Institute of Photonics Technologies
論文出版年：	2007
畢業學年度：	95
語文別：	中文
論文頁數：	171
中文關鍵詞：	多晶矽、橢圓儀、光學常數、介電函數
相關次數：	點閱：55 下載：0
分享至:	分享至facebook 分享至twitter

查詢本校圖書館目錄查詢臺灣博碩士論文知識加值系統勘誤回報

本文主要使用光譜橢圓儀(Spectroscopic Ellipsometer)來研究非晶矽(amorphous silicon)薄膜透過熱退火處理轉變成多晶矽(poly silicon)薄膜之光學性質。我們將非晶矽薄膜沉積在已成長12nm氧化層之矽晶圓(100)上，將非晶矽薄膜經過15種製程條件後所得到多晶矽薄膜之試片以及直接沉積多晶矽薄膜之試片，利用參數式半導體模型(parametric semiconductor model)來分析試片各自多晶矽薄膜之光學常數(optical constant)與介電函數(dielectric function)。可以發現多晶矽薄膜與單晶矽(crystalline silicon)薄膜介電函數的臨界點(critical point)不同，當介電函數越接近單晶矽之多晶矽薄膜，其在光通訊波段1310nm與1550nm之消光係數(extinction coefficient)越低。最後發現製程條件為a-Si + RTA 1050℃ 20s + 600℃ 24hr + 900℃ 20hr得到之多晶矽薄膜在光通訊波段之消光係數最低。利用原子力顯微鏡發現利用非晶矽薄膜透過熱退火處理轉變成多晶矽薄膜之表面粗糙度比直接沉積多晶矽薄膜較為平坦。再透過電容電壓量測與漏電流量測發現試片經過熱退火處理後，仍保有金氧半電容與低漏電流之特性。

摘要..............................................................................................................................Ⅰ
誌謝............................................................................................................................ Ⅱ
目次............................................................................................................................ Ⅲ
圖目錄..........................................................................................................................Ⅴ
表目錄..........................................................................................................................Ⅹ
第一章    緒論................................................................................................................1
1 前言.........................................................................................................1
2 研究動機與目的.....................................................................................3
3 文獻回顧.................................................................................................7
第二章  非晶矽再結晶機制........................................................................................8
1前言..........................................................................................................8
2 準分子雷射結晶法.................................................................................9
3 金屬誘發橫向結晶法...........................................................................15
4 固相結晶法 (Solid Phase Crystallization；SPC) ............................... 19
第三章  多晶矽薄膜製備與量測..............................................................................21
1 多晶矽薄膜製程簡述...........................................................................21
2 實驗內容...............................................................................................24
2.1 晶圓準備....................................................................................24
2.2 晶圓清洗....................................................................................24
2.3 氧化層成長................................................................................26
2.4 多晶矽和非晶矽薄膜沉積........................................................27
2.5 非晶矽薄膜之熱退火處理........................................................27
2.6 電容電壓與漏電流量測之試片製作........................................30

3 光譜橢圓儀(Spectroscopic Ellipsometer；SE) ...................................32
3.1 橢圓偏光術介紹......................................................................32
3.2 旋轉檢偏器橢圓儀..................................................................35
3.3 旋轉檢偏器橢圓儀的Jones Matrix分析................................38
3.4 光學模型..................................................................................42
4 掃描式電子顯微鏡(Scanning Electron Microscope；SEM) ..............52
5 原子力顯微鏡(Atomic Force Microscope；AFM) ...........................54
6 電壓-電容量測(Capacitance-Voltage；C-V) ....................................58
6.1  MOS操作區域能帶圖...........................................................58
6.2 界面陷阱與氧化層電荷..........................................................59
第四章  多晶矽薄膜量測數據與分析......................................................................65
1 光學特性量測.......................................................................................65
2 表面粗糙度改善.................................................................................130
3  MOSC量測.......................................................................................144
3.1 C-V曲線....................................................................................144
3.2 I-V曲線.....................................................................................159
第五章  結論與未來展望........................................................................................168
1 結論.....................................................................................................168
2 未來展望.............................................................................................169

                                

[1] T. Noguchi, A. J. Tang and J. A. Tsai, “Comparison of Effects Between Large-Area-Beam ELA and SPC on TFT Characteristics”, IEEE Transation Devices Lett. Vol. 43, No. 9 (1996)

[2] N. Kubo, N. Kusumoto, T. Inushima and S. Yamazaki, “Characteristics of Polycrystalline-Si Thin Film Transistors Fabricated by Excimer Laser Annealing Method”, IEEE Transation Devices Lett. Vol. 41, No. 10 (1994)

[3] K. S. Nam, Y. H. Song, J. T. Baek, H. J. Kong and S. S. Lee, “Thin-Film Transistors with Polycrystalline Silicon Prepared by a New Annealing Method”, Jpn. J. Appl. Phys. Vol.32, No.5a (1993)

[4] V. W. C. Chan and P. C. H. Chan, “An Empirical Model to Determine the Grain Size of Metal-Induced Lateral Crystallized Film”, IEEE Transation Devices Lett. Vol. 49, No. 8 (2002)

[5] A. Liu, R. Jones, L. Liao, D. S.Rubio, D. Rubin, O. Cohen, R. Nicolaescu and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor”, Nature (London) Vol.427, p.615 (2004)

[6] R. A. Soref and B. R. Bennett “Electrooptical effects in silicon”, IEEE J. Quant. Electron., Vol. QE-23, p.123-123 (1987)

[7] Y. Laghla and E. Scheid, “Optical study of undoped, B or P-doped polysilicon”, Thin Solid Film Vol.306 (1997)

[8] Y. Laghla, E. Scheid, H. Vergnes and J. P. Couderc, “Electronic properties and microstructure of undoped, and B- or P-doped polysilicon depsotied by LPCVD”, Solar Energy Materal and Solar Cells Vol.48 (1997)

[9] V. Subramanian, P. Dankoski, L. Degertekin, T. K. Yakub and K. C. Saraswat, “Controlled Two-Step Solid-Phase Crystallization for High-Performance Polysilicon TFT’s”, IEEE Electron Devices Lett. Vol. 18, No. 8 (1997)

[10] M. K. Hatalis and D. W. Greve, ”Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films”, J. Appl. Phys. Vol.63 (1988)

[11] D. E. Aspnes and A. A. Studna, ”Dielectric function and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0eV”, Physical Review B, Vol.27 No.2 (1983)

[12] D. E. Aspnes, A. A. Studna and E. Kinsbron, ”Dielectric properties of heavily doped crystalline and amoephous silicon from 1.5 to 6.0eV”, Physical Review B, Vol.29, No.2 (1984)

[13] T. Suzuki and S. Adachi, ”Optical Properties of Amorphous Si Partially Crystallined by Thermal Annealing”, Jpn. J. Appl. Phys. Vol.32, (1993)

[14] G. E. Jellison, M. F. Chishoim, and S. M. Gorbatkin, “Optical functions of chemical vapor deposited thin-film silicon determined by spectroscopic ellipsometry”, Appl. Phys. Lett. Vol.62 (1993)

[15] L. Asinovsky, M. Schroth, F. Shen, and J. J. Sweeney, “Characterization and metrology of the diffusion doped polysilcon using ellisometry”, Thin Solid Film 313-314 (1998)

[16] Guide to using WVASE32, Refernce Manual, J. A. Woolam. Co., Inc

[17] B. Johs, C. M. Herzinger, J. H. Dinan, A. Cornfeld, and J. D. Benson, “Development of a parametric optical constant model for Hg1-xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth”, Thin Solid Film 313-314 (1998)

[18] B. Johs “Overview of Variable Angle Spectroscopic Ellipsometry (VASE), Part II: Advanced Applications”, SPIE, Vol. CR72 (1999)

[19] W. TheiB, “Optical properties of porous silicon”, Elsevier, Vol.29 (1997)

全文公開日期本全文未授權公開 (校內網路)
全文公開日期本全文未授權公開 (校外網路)

簡易檢索 / 詳目顯示

相關論文