本論文中，是使用本實驗室的DC sputter & RF sputter 機台以及中山大學曾百亨教授實驗室的RTA Selenization，以及本實驗室的RF sputter來完成整個CIAS solar cell 元件。
首先以soda lime glass 作為基板，先以DC sputter鍍上Mo金屬作為back contacts，之後再鍍上Cu、In、Al作為CIAS材料的source；不同於一般co-sputter的作法，我們再鍍Cu、In、Al時並沒有同時參入硒，而是之後再使用硒粉升溫來參入硒，硒化時使用快速硒化法和慢速硒化兩種方法，之後使用化學浴沉積法來鍍製buffer layer，我們選擇以ZnSe來作為我們元件buffer layer的材料，最後以RF sputter鍍上ZnO以及ITO最厚鍍上鋁柵型電極作為上電極。

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