在本篇碩士論文中，我們探討了多晶基板上鎳薄膜自組再結晶以製作出奈米級柵欄型結構的太陽能電池應用。經過鎳薄膜再結晶奈米結構的均勻分布後我們使用RIE乾蝕刻在多晶上達成柵欄型結構,最後經過參雜、鍍製鋁電極、退火、鍍製抗反射層製作成多晶奈米柵欄型太陽能電池，另外在乾蝕刻完後分析基板的少數載子生命期，並增加一個額外去除表面結構損傷的製程步驟，利用HNO3/HF/H2O混和的蝕刻液來做處理來移除乾蝕刻所造成的表面損傷，奈米柵欄型結構從反射率量測結果也得到相當低的反射率。
今年本篇論文是第一次利用鎳薄膜再結晶自組的奈米結構與乾蝕刻在多晶上達到奈米柵欄型結構並製作成多晶太陽能電池，短路電流(Jsc)達到34.08(mA/cm2)，開路電壓(Voc)達到0.54(V)，填充因子(F.F.)為0.67，光電轉換效率達到12.32%。

In this thesis, we investigate on the nucleation of nickel thin film to fabricate nano structure on P-type poly crystal silicon wafer surface for solar cell application. We used RIE (reactive ion etching) to achieve modified grating structures on polycrystalline silicon wafer after obtaining a uniform distribution of Ni islands on the surface of Si wafer by nucleation of nickel thin film. Finally, we fabricated poly-Si solar cell with modified grating structures after the following process steps such as doping, aluminum electrode deposition, annealing, and anti-reflective coating deposition.
We analyzed the minority carrier life time on Si wafer surface after RIE. An extra damage elimination process by HNO3/HF/H2O was carried out in addition to the process flow to enhance the carrier life time. The reflection of nano grating structures obtained was very low from the reflection measurements.
In this year this was the first time, we used nano structures of nucleation of nickel thin film and RIE to achieve nano grating structures on poly silicon wafer and fabricating poly silicon solar cell with modified grating structures with this method. The short circuit current (Jsc) reached a value of 34.08(mA/cm2). The open circuit voltage (Voc) and Fill factor obtained was 0.54(V) and 0.67 respectively. The efficiency obtained for this solar cell was 12.32%.

References：
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[12] http://www.newport.com/
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