本論文提出一應用於獵能系統的超低壓電荷泵，該電荷泵不僅能在極低的輸入電壓下運作，還具備廣泛的輸入電壓範圍與極低的開關導通電阻。此外，本設計亦整合回授系統，以確保輸出電壓在負載變動時的穩定性。

一般電荷泵通常需較高的輸入電壓，當輸入電壓過低甚至低於電晶體的臨界電壓時，開關的導通電阻顯著上升，導致電荷泵的電壓傳輸效率下降，甚至無法正常升壓。因此，本研究的設計重點著重在於降低電晶體開關的導通電阻，以提升低壓條件下的效率與穩定性。

由於輸入電壓極低，傳統電荷泵的回授系統通常需額外的高電壓供應，但在自主能源系統中，回授系統必須能自給自足。因此，本研究採用簡化回授架構，使其能在極低輸入電壓下運行，確保電荷泵在負載變動時仍能維持穩定輸出。除此之外，本電荷泵還可在 0.25 V~ 0.6 V 的輸入電壓範圍內，不同負載電流下達到預定輸出電壓規格，使其應用範圍更加廣泛。

本晶片使用TSMC 0.18 μm 1P6M CMOS的製程，晶片尺寸為846 μm x 810 μm。電路的輸入電壓為0.25 V~0.6V、負載電容為50 pF，在輸入電壓為0.35 V、負載電流0 μA到 10 μA的變動下，可以達到輸出電壓1.5 V之規格，且在0.25 V~ 0.6 V 的輸入電壓範圍內，不同負載電流下分別達到1.1 V~2.6 V的預定輸出電壓規格。

This paper presents an ultra-low voltage charge pump designed for energy harvesting systems. The proposed charge pump not only operates under extremely low input voltages but also features a wide input voltage range and ultra-low switch on-resistance. Additionally, a feedback system is integrated into the design to ensure output voltage stability under varying load conditions.

Conventional charge pumps typically require higher input voltages. When the input voltage is too low, even below the transistor threshold voltage, the switch on-resistance increases significantly, leading to reduced charge transfer efficiency and potential failure in voltage boosting. Therefore, this study focuses on minimizing the switch on-resistance of transistors to enhance efficiency and stability under low-voltage conditions.

Since the input voltage is extremely low, traditional charge pump feedback systems usually require an additional high-voltage power supply. However, in self-powered energy systems, the feedback system must be self-sustaining. Thus, this study adopts a simplified feedback architecture that allows operation under ultra-low input voltages, ensuring stable output despite load variations. Furthermore, this charge pump is capable of achieving the desired output voltage specifications under different load currents within an input voltage range of 0.25 V to 0.6 V, thereby broadening its range of applications.

The proposed chip is fabricated using the TSMC 0.18 μm 1P6M CMOS process, with a chip size of 846 μm × 810 μm. The circuit operates with a supply voltage of 0.25 V to 0.6 V and a load capacitance of 50 pF. Under a supply voltage of 0.35 V, the charge pump achieves an output voltage of 1.5 V, even when the load current varies from 0 μA to 10 μA. Moreover, within the input voltage range of 0.25 V to 0.6 V, the circuit is capable of delivering target output voltages ranging from 1.1 V to 2.6 V under different load current conditions.