在第一個實驗(第三章)我們將介紹以ZrLaOx/ZrTiOx/ZrLaOx堆疊介電層作為金屬-絕緣層-金屬(Metal-Insulator-Metal, MIM)電容其中的ZrTiOx介電層經氮電漿處理60秒，跟未經氮電漿處理的ZrLaOx/ZrTiOx/ZrLaOx當作介電層的電容比較，這個MIM的電容密度稍微減少到14.38 fF/μm2以及VCC-α稍微劣化至68 ppm/V2，但仍然符合ITRS 2024的需求。不過，經過氮電漿處理後的漏電因子大幅度改善為32.8。此外，經加壓產生的漏電(SILC)在電壓為2.5伏特1000秒的條件下為0.16以及頻率幾乎不隨電容密度而改變。更重要的是，在相同的加壓條件下，有很好的電容變化可靠度在10年操作後為0.38%。

在第二個實驗(第四章)，我們將介紹以鈣鈦礦為基底部分結晶的材料BaZryTi1-yO3 (y=0.6)，發現這材料的κ值高達48.6以及有正的VCC-α值。堆疊BaZryTi1-yO3以及ZrTiOx當作介電層，這個MIM電容經由相消效應可達到極低的VCC-α值為14 ppm/V2以及電容密度值13.4 fF/μm2，很低的介電消散角度(loss tangent)低於0.01，很低的漏電流值7.5X10-9 A/cm2在-1V的條件下。固定電壓2.5伏持續1000秒，劣化的漏電流大小少於30%被量測到。此外，有極好電容變化可靠度在10年操作後為0.89%

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