本實驗主要在研究以電漿增強式化學氣相沉積法所成長的氮化矽，氧化矽，和氮氧化矽薄膜以及一些以不同材料合成的雙層及三層結構。討論這些薄膜在沉積後（as deposit），退火（annealing）後之平均應力（uniform stress）和梯度應力（gradient stress）對懸臂樑形變所造成的影響。研究中並嘗試以應力補償以及力矩平衡的方式沉積多層薄膜，製作低應力及平坦的懸臂樑結構。結果我們發現，對於單層結構而言，由於梯度應力的不容易控制，使得要製作出平坦的懸臂樑存在著一定的難度。對於雙層結構而言，由於上下兩層應力方向的不同，將會造成一個很大的轉矩（bending moment），使得懸臂樑彎曲的程度大幅度增加。而對於三層結構而言，我們可藉著調變各層間的厚度比例，從而製作出十分平坦的懸臂樑。

This thesis is dedicated to a comprehensive study on stress of various films and composite structures such as bilayer and sandwich structures. The film materials, including silicon nitride (SiNxHy), silicon dioxide(SiO2), and silicon oxynitride (SiON), all deposited by plasma enhanced chemical vapor deposition(PECVD) technology. We focus on the influence of deposition parameters and annealing to uniform stress and gradient stress of the films, discussing what happens to the bending moment of the cantilever beams. We try to use the concept of stress compensation to fabricate low stress and flat cantilever beams. We observed that various single layers are hard to fabricate flat cantilever beams due to the difficulties of the control of gradient stress. For bilayer structures, as a result of the different directions of the stress of upper and lower layers, there will exist a large bending moment, leading the extent of bending of the cantilever beams more serious. And for sandwich structures, we can make quite flat cantilevers by adjusting the thickness of each layer.