隨著半導體元件尺寸縮小和深□比拉大，銅金屬導線技術的要求度也隨之變高。PVD或CVD的鍍膜技術會面臨到披覆性不均一、無法深入高深□比基材及沈積溫度過高等問題。本研究則利用化學流體沈積法沈積銅於矽基材上(Chemical Fluid Deposition of Copper : CFDCu)，嘗試解決上述的問題。
在大多數的銅膜製程中，銅會選擇性沈積在金屬層上，而非介電層上。所以為了降低銅沈積在矽基材上的溫度，和增加銅和矽基材的附著性，會先沈積催化金屬層如Pd或Pt在矽基材上，再進行銅膜製程。本研究亦先以不同的改質方法在矽基材上放入催化金屬，再進行CFDCu。改質方法包括以CFD沈積Pd，及以含浸法放入Pd、Cu及Pt。藉由銅沈積溫度及溝槽中的沈積形態，來比較改質方法中CFD和含浸法的差異，也可比較改質金屬Pd、Cu及Pt的差異。
CFDCu實驗結果顯示，在沈積溫度210 oC和160 oC時，各種改質方法都能比未改質時，大幅提高銅還原程度，而且都可填滿溝槽。但當還原溫度降至140 oC時則未完全還原。由各項分析結果如還原程度、織構係數、晶粒大小、沈積形態、縱深雜質分布及電阻率，都顯示沈積溫度在210 oC優於160 oC。但不論那種改質方法都未能顯示出差異性，可能原因是在各方法中，改質金屬的粒子發生聚集、分布不均勻、或未深入溝槽等現象，使得催化作用未出現，所以未能大幅降低沈積溫度。
改質實驗中所觀察到含浸法中不同操作，對CFDCu之溝槽沈積形態的影響如：真空乾燥較緩慢乾燥有利，無□燒處理較經過□燒處理有利，浸置液濃度對CFDCu的影響不大，及經過Wiping(表面擦拭)處理較沒有經過Wiping有利。

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