誌謝 摘要 第一章：序論 1.1 研究背景 1.2 研究動機 1.3 無線收發機系統架構 1.4 無線區域網路系統規格 1.5 論文架構 第二章：CMOS RF製程技術簡介及其在功率放大器設計上的限制 2.1 TSMC 0.25um 1P5M CMOS製程技術簡介 2.1.1 元件模型的重要性 2.1.2 MOS電晶體 2.1.3 MIM電容 2.1.4 平面螺旋式電感 2.1.5 電阻 2.1.6 Bonding Wire及PAD寄生效應 2.2 CMOS製程技術在功率放大器設計上的限制 2.2.1 概說 2.2.2 CMOS高頻大訊號Model的準確性 2.2.3 崩潰電壓的考量 2.2.4 CMOS轉導 2.2.5 負載電感的考量 2.2.6 電路寄生電容、電阻及電感的考量 2.2.7 基板耗損的考量 第三章：功率放大器基本原理及設計方法 3.1 功率放大器基本原理 3.1.1 電晶體的選擇 3.1.2 放大器操作模式的選定 3.1.3 穩定度的分析 3.1.4 輸入/輸出阻抗匹配網路 3.1.5 功率放大器效率的定義 3.1.6 最佳負載的求取方式 3.2 功率放大器的重要規格 3.3 功率放大器的種類 3.3.1 線性或放大模式功率放大器 3.3.2 非線性或開關模式功率放大器 3.3.3 總結 第四章：CMOS 2.4GHz線性補償功率放大器設計 4.1 簡介 4.2 電路設計與實現 4.2.1 架構簡介 4.2.2 輸出級放大電路 4.2.3 輸出阻抗轉換電路 4.2.4 輸入級驅動電路 & 輸入/二級間匹配網路 4.2.5 線性補償電路 4.3 模擬結果 4.3.1 DC特性模擬 4.3.2 Load-Pull模擬 4.3.3 S參數模擬 4.3.4 暫態特性模擬 4.3.5 輸出功率及效率模擬 4.3.6 線性特性模擬 4.3.7 雜訊指數模擬 4.3.8 電路穩定度模擬 4.3.9 模擬結果整理與比較 4.4 電路佈局 4.5 量測考量 4.5.1 PCB test board 4.5.2 量測機台與環境設定 4.5.3 量測步驟 4.6 量測結果與討論 4.6.1 S參數量測結果 4.6.2 頻譜量測結果 4.6.3 Pout、PAE、Power Gain、P1dB、IIP3、THD量測結果 4.6.4 Transmit spectrum mask及ACPR量測結果 4.6.5 量測結果與模擬結果比較及討論 4.7 設計與製作流程總結 第五章：CMOS 2.4GHz可調增益線性功率放大器設計 5.1 簡介 5.2 電路設計 5.2.1 可調增益功率放大器設計概論 5.2.2 電路架構簡介 5.2.3 輸出級放大電路 5.2.4 輸出阻抗轉換電路 5.2.5 輸入級功率控制驅動電路 & 輸入/二級間匹配網路 5.2.6 線性補償電路 5.3 模擬結果 5.3.1 DC特性模擬 5.3.2 Load-Pull模擬 5.3.3 S參數模擬 5.3.4 暫態特性模擬 5.3.5 輸出功率及效率模擬 5.3.6 線性特性模擬 5.3.7 雜訊指數模擬 5.3.8 電路穩定度模擬 5.3.9 模擬結果整理與比較 5.4 設計流程總結 第六章：結論 6.1 結論 6.2 後續研究建議 第七章：參考文獻rf [1 ] P.R. Gray, and R.G. Meyer, “Future Directions of Silicon IC’s for RF Personal Communications,” Conference Proceedings, 1995 Custom Integrated Circuits Conference”, May 1995, pp. 93-90. [2 ] A. Abidi, A. Rofougaran, G. Chang, J. Rael, M. Rofougaran, and P.Chang, “The future of CMOS wireless transceivers,” in Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 1997, pp. 118—119. [3 ] Noriharu Suematsu, and Shintaro Shinjo, “CMOS/BiCMOS Power Amplifier Technology Trend in Japan,” 2001 IEEE GaAs Digest, pp. 107-110. [4 ] Lawrence E. Larson, ”Silicon Technology Tradeoffs for Radio-Frequency / Mixed-Signal「Systems-on-a-Chip」,” IEEE TRANSACTIONS ON ELECTRON DEVICES, Invited Paper, pp.1-17. [5 ] D. Su and W. McFarland, “A 2.5V, 1-W monolithic CMOS RF power amplifier,” in Proc. Custom Integrated Circuits Conf., May 1997, pp. 189-192. [6 ] Ravi Gupta, David J. Allstot, “Fully Monolithic CMOS RF Power Amplifiers:Recent Advances,” IEEE Communications magazine, April 1999, pp. 94-98. [7 ] Behzad Razavi, RF Microelectronics, Prentice-Hall, Inc., 1998. [8 ] A. Rofougaran, G. Chang, J. J. Rael, J. Y. -C. Change, M. Rofougaran, P. J. Chang, M. Djafari, M.-K. Ku, E. W. Roth, A. A. Abidi, and H. Samueli, “A single-chip 900-MHz spread-spectrum wireless transceiver in 1-mm CMOS -- Part I: Architecture and transmitter design,” IEEE J. Solid-State Circuits,vol. 33, Apr. 1998, pp. 513-534. [9 ] Alireza Zolfaghari, and Behzad Razavi, “A Low-Power 2.4-GHz Transmitter / Receiver CMOS IC,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 38, NO. 2, FEBRUARY 2003, pp. 176-183. [10 ] SIG, Bluetooth specification version 1.0B, 1999. [11 ] IEEE Standard 802.11b: Higher-Speed Physical Layer Extension in the 2.4GHz Band. [12 ] J.-J. Ou, X. Jin, I. Ma, C. Hu, P.R. Gray, “CMOS RF Modeling for GHz Communication IC’s,” Digest of Technical Papers, 1998 Symposium on VLSI Technology, June 1998, pp. 94-95. [13 ] Y.-G. Lee, H.-Y. Lee, “Novel high-Q bondwire inductor for MMIC,” Technical Digest, International Electron Devices Meeting, 1998, pp. 548-551. [14 ] P.R. Gray and R.G. Meyer, Analysis and Design of Analog Integrated Circuits, Fourth Edition, John Wiley & Sons, New York, 1993. [15 ] I.C. Chen, S. Holland, C. Hu, “Electrical Breakdown of Thin Gate and Tunneling Oxides,” IEEE Transactions on Electron Devices, Feb. 1985, pp. 413. [16 ] T.H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, Cambridge University Press, Cambridge, United Kingdom, 1998. [17 ] 魏吉鴻, 微波積體化功率放大器設計及研製, 國立中央大學電機所碩士論文, 2002. [18 ] Peter B. Kenington, High-Linearity RF Amplifier Design, Artech House, 2000. [19 ] Guillermo Gonzalez, MICROWAVE TRANSISTOR AMPLIFIERS, Analysis and Design, Second Edition, Prentice Hall, 1997. [20 ] 黃志偉, CMOS射頻無線發射端電路設計, 國立中央大學電機所碩士論文, 2002. [21 ] C. Y. Chiang and H. Chuang, “A simple and effective load-pull system for RF power transistor large-signal measurements for wireless communication power amplifier design,” IEEE Transactions on Instrumentation and Measurement, vol. 46, no. 5, Oct. 1997, pp. 1150-1155. [22 ] S. C. Cripps, RF Power Amplifiers for Wireless Communications, Artech House, Boston, 1999. [23 ] N. O. Sokal, “RF power amplifiers-classes A through S,” in IEEE Program Proc. Professional Electro’95 Int., 1995, pp. 335-400 [24 ] N. Sokal, and A. Sokal, “Class E-A New Class of High-Efficiency Tuned Single-Ended Switching Power Amplifiers,” IEEE Journal of Solid State Circuits,Vol. SC10, June 1975, pp. 168-76. [25 ] M. Hristov, G. Dodeva, and A.Roussel, “High frequency Class E Power Amplifier,” 2002 First INTERNATIONAL IEEE SYMPOSIUM “INTELLIGENT SYSTEMS”, SEPTEMBER 2002, pp. 48-51. [26 ] S. C. Cripps, Advanced Techniques in RF Power Amplifier Design, Artech House, Boston, 2002. [27 ] E. Chen, D. Heo, M. Hamai, J. Laskar, D. Bien*, “0.24-um CMOS Technology for Bluetooth Power Applications,” IEEE 2000, pp. 163-166. [28 ] Kenneth K. O, Xi Li, Feng-Jung Huang, and William Foley, “CMOS Components for 802.11b Wireless LAN Applications,” 2002 IEEE Radio frequency Integrated Circuits Symposium, pp. 103-106. [29 ] Kazuya Yamamoto, Tetsuya Heima, Akihiko Furukawa, Masayoshi Ono, Yasushi Hashizume, Hiroshi Komurasaki, Shigenobu Maeda, Hisayasu Sato, and Naoyuki Kato, “A 2.4-GHz-Band 1.8-V Operation Single-Chip Si-CMOS T/R-MMIC Front-End with a Low Insertion Loss Switch,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 8, AUGUST 2001, pp. 1186-1197. [30 ] Changsik Yoo, and Qiuting Huang, “A Common-Gate Switched 0.9-W Class-E Power Amplifier with 41% PAE in 0.25um CMOS,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 5, MAY 2001, pp. 823-830. [31 ] Koen L. R. Mertens and Michiel S. J. Steyaert, “A 700-MHz 1-W Fully Differential CMOS Class-E Power Amplifier,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 37, NO. 2, FEBRUARY 2002, pp. 137-141. [32 ] Ichiro Aoki, Scott D. Kee, David B. Rutledge, and Ali Hajimiri, “Fully Integrated CMOS Power Amplifier Design Using the Distributed Active-Transformer Architecture,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 37, NO. 3, MARCH 2002, pp. 371-383. [33 ] Sifen Luo, Tirdad Sowlati, “A Monolithic Si PCS—CDMA Power Amplifier With 30% PAE at 1.9 GHz Using a Novel Biasing Scheme,” IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 49, NO. 9, SEPTEMBER 2001, pp. 1552-1557. [34 ] MONA MOSTAFA HELLA, MOHAMMED ISMAIL, RF CMOS PWER AMPLIFIERS : Theory, Design and Implementation, Kluwer Academic Publishers, 2002. [35 ] Behzad Razavi, Design of Analog CMOS Integrated Circuits, McGraw Hill, 2001. [36 ] T. Yoshimasu, M. Akagi, N. Tanba and S. Hara, “An HBT MMIC Power Amplifier with an Integrated Diode Linearizer for Low-Voltage Portable Phone Application,” IEEE Journal of Solid-State Circuits, Vol. 33, No. 9, 1998, pp. 1290-1296 [37 ] Y. S. Noh, and C. S. Park, “PCS-CDMA Dual-Band MMIC Power Amplifier With a Newly Proposed Lineaarizing Bias Circuit,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 37, NO. 9, SEPTEMBER 2002, pp. 1096-1099. [38 ] B. Kim, J. S. Ko and K. Lee, “A New Linearization Technique for MOSFET RF Amplifier Using Multiple Gated Transistors,” IEEE Microwave and Guided Wave Letters, vol. 10, NO.9, September 2000, pp. 371-373. [39 ] C. Wang, L-E. Larson and P-M. Asbeck, “A Nonlinear Capacitance Cancellation Technique and its Application to a CMOS Class AB Power Amplifier,” IEEE RFIC Symposium Digest of Papers, 2001, pp. 39-42. [40 ] Cheng-Chi Yen, Huey-Ru chuang, “A 0.25-um 20dBm 2.4GHz CMOS power Amplifier With an integrated Diode Linearizer,” IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 13, NO. 2, FEBRUARY 2003, pp. 45-47. [41 ] Y. J. E. Chen, M. Hamai, D. Heo, A. Sutono, S.Yoo, and J. Laskar, “RF Power Amplifier Integration in CMOS Technology,” 2000 IEEE MTT-S Digcst, pp. 545-548. [42 ] Tirdad Sowlati, Domine Leenaers, “A 2.4GHz 0.18um CMOS Self-Biased Cascode power Amplifier with 23dBm Output Power,” ISSCC 2002 / SESSION 17 / ADVANCED RF TECHNIQUES / 17.5, February 2002, pp. 466-468. [43 ] Ravi Gupta, Brian M. Ballweber, and David J. Allstot, “Design and Optimization of CMOS RF Power Amplifiers,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 2, FEBRUARY 2001, pp. 166-175. [44 ] Peter de Hek, “Design and Results of State-of-the-art Microwave Monolithic Integrated High-Power Amplifiers,” TNO Physics and Electronics Laboratory,2001, pp. 58-65. [45 ] Masaya Iwamoto, Aracely Williams, Pin-Fan Chen, Andre G. Metzger, Lawrence E. Larson, and Peter M. Asbeck, “An Extended Doherty AmplifierWith High Efficiency Over a Wide Power Range,” IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 49, NO. 12, DECEMBER 2001, pp. 2472-2479. [46 ] Danielle Coffing, Eric Main, , Mark Randol, and Gina Szklarz, “A Variable Gain Amplifier With 50-dB Control Range for 900-MHz Applications,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 37, NO. 9, SEPTEMBER 2002, pp. 1169-1175. [47 ] Esko Jarvinen, “GaAs HBT Power Amplifier with Smooth Gain Control Characteristics,” IEEE 1998, pp. 321-324. [48 ] M. Rofougaran, A. Rofougaran, C. Olgaard, and A. A. Abidi, “A 900 MHz CMOS RF power amplifier with programmable output power,” in IEEE Symp. VLSI Circuits Dig. Tech. Papers, 1994, pp. 133-134. [49 ] Alireza Shirvani, David K. Su, and Bruce A. Wooley, “A CMOS RF Power Amplifier With Parallel Amplification for Efficient Power Control,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 37, NO. 6, JUNE 2002, pp. 684-693. [50 ] Jonghae Kim, Bradford Palmer, and Ramesh Harjani, “A High efficiency +20 dBm, 900 MHz Power Amplifier Module im 0.35um CMOS,” IEEE 2001, pp. 149-152. [51 ] K.J. Cho, J.S. Park, J.H. Kim, J.C. Lee, B.J. Lee, N.Y. Kim, and S.P. Stapleton*, “RF Predistortion of Power Amplifiers Using 2nd Harmonic Based Technique for Optimization of Intermodulation Products,” IEEE 2002, pp. 621-624. [52 ] Marco Spirito, Leo C. N. de Vreede, Lis K. Nanver, Jan-Erik Mueller, and Joachim N. Burghartz, “Low-Loss passive for 2nd-Harmonic termination Control in Power Amplifiers for Mobile Applications,” IEEE 2003, pp. 49-52. [53 ] Elizabeth C. Glass, Jenn-Hwa Huang, Joseph Staudinger, Senior Member, IEEE, Michael Shields, Marino John Martinez, Olin L. Hartin, Wendy Valentine, and Ellen Lan, “Application of Enhancement Mode FET Technology for Wireless Subscriber Transmit/Receive Circuits,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 35, NO. 9, SEPTEMBER 2000, pp. 1276-1284. [54 ] Kang-Yoon Lee, Seung-Wook Lee, Yido Koo, Hyoung-Ki Huh, Hee-Young Nam, Jeong-Woo Lee, Joonbae Park, Kyeongho Lee, Deog-Kyoon Jeong, and Wonchan Kim, “Full-CMOS 2-GHz WCDMA Direct Conversion Transmitter and Receiver,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 38, NO. 1, JANUARY 2003, pp. 43-53.