地球溫室效應所造成的災難日趨明顯，綠色能源的開發已在全球如火如荼的展開。在新能源的開源進行之外，節流也能大大降低二氧化碳的排放量。提高電力轉換器效率及降低待機功率消耗是電力電子領域努力不懈的課題，而在這個課題上，半導體技術扮演著非常重要的角色。
本論文著重在提升整體電力轉換器效能下提出新型態的功率元件，利用對系統架構的了解進行功率元件架構的改良以達到節能的目的。本論文採用的元件架構以原製程技術作為基礎，只需要改變光罩設計就可以達成所需元件，可以直接應用在目前已成熟的製程架構中，而不需耗費長時間開發新的製程技術來達成新的元件特性要求，可以協助許多電源設計廠上通過目前的能源規範，也可以降低對能源的需求。
在本論文中，從交流市電轉成一般電器使用的低壓直流電是首先討論的課題；利用接面場效電晶體來提供電源啟動功能可以達到降低待機功率的效果。第二部份則對離散式功率金氧半電晶體作一製程的簡化。第三部份針對鋰離子電池的保護電路提出一新型態的功率金氧半電晶體。最後則對降壓型電力轉換器中電壓突波原理的分析提出一選擇功率金氧半電晶體的方式。藉由這些研究成果的結合，整體的電源轉換效率不論是在待機或是操作模式中都可被提升。

The disaster caused of greenhouse effects of the earth is becoming more obvious, the development of the green energy has been already in the whole world. Outside increasing income in new energy, reducing expenditure can reduce the emission of the carbon dioxide greatly too. Improve power converter efficiency and reduce stand-by power loss are the subjects that engineers are hard working to do. On this subject, the technology of the semiconductor is playing a very important role.
This dissertation focuses on the improving and creating of the power devices characteristics to increase whole power converter efficiency. Utilize knowledge of systematic structure to carry on the improvement of the power device structure in order to achieve the energy-conserving purpose. Based on the original technology, we won’t need to change any process step to complete the device design. We can only design the layout of the devices in the original processes; it is very great to apply the devices into the applications in a short time without long developing schedule of a new semiconductor process technology.
In the first part, a high voltage JFET is used to be a start-up device. With this device, the stand-by power dissipation can be reduced. In the second part, a trench termination is designed to simplify the process of a low voltage trench power MOSFET. Two solutions for improving the on-state resistance of trench power MOSFET in Li-ion battery protect are provided in the third part. By new cell structure and new device structure design, the on-state resistance can be reduced and the back side metal can also be removed. In the last part, the voltage spike of buck converter is discussed. Several designs of power MOSFET are used to verify the point.

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