本論文中，我們嘗試透過混合的概念，將兩種在效能與穩定性上各有特色的p型半導體分子，五環素(pentacene，PTC)與雙噻吩蒽(antradithiophene ，ADT)，以真空共蒸鍍的方式，製作各種以不同比例混合之有機薄膜，不同於合成新分子的方式，混合薄膜可調比例與省時的特點在未來發展和應用上具有相當的潛力。
透過X光光電子發射光譜 (X-ray photoemission spectroscopy，XPS)分析其成分組成並再次確認樣品的混合比例，然後使用原子力顯微鏡(atomic force microscope，AFM) 分析各樣品薄膜之表面形貌與晶粒大小，再從X光繞射圖譜(X-ray diffraction，XRD)的結果去了解各個樣品的晶體結構與晶相好壞。並將其製成有機薄膜場效電晶體元件，分別量測各混合樣品之電性效能，並觀察元件在大氣中的穩定性表現。最後在透過氧化實驗實際了解有機薄膜的氧化情形與穩定性之關係。
從X光繞射圖譜的結果中，我們發現有機薄膜中的兩種分子不是以相分離的方式各自成長，而是確實有混合在一起並產生了新的繞射特徵峰訊號，混合樣品的繞射特徵峰訊號位置會隨著混合比例改變。其中五環素薄膜和雙噻吩蒽薄膜的d-spacing分別為1.545 nm與1.415 nm，當五環素在樣品中的含量越多其d-spacing越大，分子結構中的c軸越直立於基材表面，分子間芳香環的重疊面積也隨之增加，有利於載子傳遞。AFM的結果中，發現混入少量雙噻吩蒽可以使樣品薄膜形成比五環素薄膜大的晶粒，成長模式也較容易往橫向方向發展，因此在電性效能與穩定性上皆有較好的表現。
我們有系統的研究載子遷移率、啟動電壓與開關電流比等各項電性參數與混合薄膜之組成的關係，我們發現以90% PTC / 10% ADT的混合比例製作出兼具高電性效能與穩定性之有機場效電晶體元件，其元件之載子遷移率為0.37 cm2V-1s-1與五環素元件之載子遷移率0.44 cm2V-1s-1相似。至於混合薄膜元件之空氣穩定性，在大氣中經過約900次之操作穩定性量測與三個月的耐久穩定性量測，相較五環素元件之載子遷移率衰減至0.2 cm2V-1s-1與0.008 cm2V-1s-1，混合薄膜電晶體之載子遷移率還是可以分別維持在0.3 cm2V-1s-1與0.1 cm2V-1s-1左右。最後我們從將薄膜樣品放置於氧氣環境下觀察其氧化程度的氧化實驗結果中也可以清楚的發現，以少比率雙噻吩蒽所製成之混合式有機薄膜元件確實有著較不容易被氧氣氧化的穩定性。

In this study, we report on the formation of blend-film organic field effect transistors of two p-type semiconductors of pentacene (PTC) and antradithiophene (ADT) that have similar structure and carrier transport properties.
We co-deposited ADT/PTC blend films of various mixing ratio and used X-ray photoemission spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD) to characterize the thin-film composition, morphology, grain size, and crystallinity. Afterwards, we fabricated blend-film OFETs, measured their electrical properties, and evaluated their air stability. And finally, we investigated the relationship between the degree of oxidation and air stability of the blend films.
From the XRD patterns, we concluded that the ADT/PTC blend films were of mixing origin not phase separated, as evidenced by the formation of the new diffraction peaks. We also found that the higher PTC proportion in the blend film would form a structure with larger d-spacing. This fact might enhance the aromatic ring overlap area and increased the intermolecular hole transport. In AFM image data, we found that the blend films with the small percentage of ADT had the larger grain size than the PTC thin film, suggesting a larger lateral growth.
For the blend-film OFETs, we found that the device of a mixing ratio of the 90%PTC had the hole transport mobility of 0.37 cm2V-1s-1, comparable to the PTC device of 0.44. The device of a mixing ratio of the 90%PTC was more stable than the PTC device in ambient condition. After 900 times cycle test, or 3 months shelf-life test, the mobility of 0.3 cm2V-1s-1 and 0.1 cm2V-1s-1 was still maintained, respectively. In comparison, the PTC device dropped to 0.2 cm2V-1s-1 and 0.008 cm2V-1s-1 after the same treatment. In the oxidation experiment results, we also found that the blend films with small percentage of ADT were less easily oxidized than PTC thin film.

Sun, Y. M.; Liu, Y. Q.; Zhu, D. B. J. Mater. Chem. 2005, 15, 53.
2. Murphy, A. R.; Frechet, J. M. J. Chem. Rev. 2007, 107, 1066.
3. Anthony, J. E. Angew. Chem.-Int. Edit. 2008, 47, 452.
4. Allard, S.; Forster, M.; Souharce, B.; Thiem, H.; Scherf, U. Angew. Chem.-Int. Edit. 2008, 47, 4070.
5. Yamashita, Y. Sci. Technol. Adv. Mater. 2009, 10, 5023.
6. Pope, M.; Swenberg Electronic Processes in Organic Crystals and Polymers; 2nd ed.; Oxford University Press, 1999.
7. Zaumseil, J.; Sirringhaus, H. Chem. Rev. 2007, 107, 1296.
8. Dimitrakopoulos, C. D.; Malenfant, P. R. L. Adv. Mater. 2002, 14, 99.
9. Klauk, H.; Halik, M.; Zschieschang, U.; Eder, F.; Schmid, G.; Dehm, C. Appl. Phys. Lett. 2003, 82, 4175.
10. Facchetti, A. Mater. Today 2007, 10, 28.
11. Haddon, R. C.; Perel, A. S.; Morris, R. C.; Palstra, T. T. M.; Hebard, A. F.; Fleming, R. M. Appl. Phys. Lett. 1995, 67, 121.
12. Kobayashi, S.; Takenobu, T.; Mori, S.; Fujiwara, A.; Iwasa, Y. Appl. Phys. Lett. 2003, 82, 4581.
13. Sakamoto, Y.; Suzuki, T.; Kobayashi, M.; Gao, Y.; Fukai, Y.; Inoue, Y.; Sato, F.; Tokito, S. J. Am. Chem. Soc. 2004, 126, 8138.
14. Qiu, Y.; Hu, Y. C.; Dong, G. F.; Wang, L. D.; Xie, J. F.; Ma, Y. N. Appl. Phys. Lett. 2003, 83, 1644.
15. Northrup, J. E.; Chabinyc, M. L. Phys. Rev. B 2003, 68, 041202.
16. Yang, H.; Yang, L.; Ling, M.-M.; Lastella, S.; Gandhi, D. D.; Ramanath, G.; Bao, Z.; Ryu, C. Y. J. Phys. Chem. C 2008, 112, 16161.
17. Okamoto, H.; Kawasaki, N.; Kaji, Y.; Kubozono, Y.; Fujiwara, A.; Yamaji, M. J. Am. Chem. Soc. 2008, 130, 10470.
18. Takimiya, K.; Yamamoto, T.; Ebata, H.; Izawa, T. Sci. Technol. Adv. Mater. 2007, 8, 273.
19. Sheraw, C. D.; Jackson, T. N.; Eaton, D. L.; Anthony, J. E. Adv. Mater. 2003, 15, 2009.
20. Tang, M. L.; Okamoto, T.; Bao, Z. N. J. Am. Chem. Soc. 2006, 128, 16002.
21. Youn, J.; Chen, M. C.; Liang, Y. J.; Huang, H.; Ortiz, R. P.; Kim, C.; Stern, C.; Hu, T. S.; Chen, L. H.; Yan, J. Y.; Facchetti, A.; Marks, T. J. Chem. Mater. 2010, 22, 5031.
22. Horowitz, G.; Peng, X. Z.; Fichou, D.; Garnier, F. Synth. Met. 1992, 51, 419.
23. Bao, Z.; Lovinger, A. J.; Dodabalapur, A. Appl. Phys. Lett. 1996, 69, 3066.
24. Vogel, J. O.; Salzmann, I.; Opitz, R.; Duhm, S.; Nickel, B.; Rabe, J. P.; Koch, N. J. Phys. Chem. B 2007, 111, 14097.
25. Vogel, J. O.; Salzmann, I.; Duhm, S.; Oehzelt, M.; Rabe, J. P.; Koch, N. J. Mater. Chem. 2010, 20, 4055.
26. Cosseddu, P.; Vogel, J. O.; Fraboni, B.; Rabe, J. P.; Koch, N.; Bonfiglio, A. Adv. Mater. 2009, 21, 344.
27. Zhang, J.; Wang, H.; Yan, X. J.; Wang, J.; Shi, J. W.; Yan, D. H. Adv. Mater. 2005, 17, 1191.
28. Northrup, J. E.; Chabinyc, M. L. Phys. Rev. B 2003, 68.
29. Laquindanum, J. G.; Katz, H. E.; Lovinger, A. J. J. Am. Chem. Soc. 1998, 120, 664.
30. Kwon, O.; Coropceanu, V.; Gruhn, N. E.; Durivage, J. C.; Laquindanum, J. G.; Katz, H. E.; Cornil, J.; Bredas, J. L. J. Chem. Phys. 2004, 120, 8186.
31. 沈鼎昌 神奇的光 ─ 同步輻射; 牛頓出版股份有限公司, 1999.
32. 汪建民 材料分析; 中國材料科學學會: 新竹縣, 2009.
33. Group, D. I. V. M. Scanning Probe Microscopy Traning Notebook Version 3.0, 2003.
34. Meyer, G.; Amer, N. M. Appl. Phys. Lett. 1988, 53, 1045.
35. Vickerman, J. T. Surface Analysis - The Principal Techniques John Wiley & Sons: New York, 1997.
36. Crist, B. V.; XPS_PHYSICS, Ed. 2010; Vol. 1,113 × 835 pixels.
37. Horowitz, G. Adv. Mater. 1998, 10, 365.
38. Coropceanu, V.; Cornil, J.; da Silva, D. A.; Olivier, Y.; Silbey, R.; Bredas, J. L. Chem. Rev. 2007, 107, 926.
39. Shirota, Y.; Kageyama, H. Chem. Rev. 2007, 107, 953.
40. Newman, C. R.; Frisbie, C. D.; da Silva Filho, D. A.; Bredas, J.-L.; Ewbank, P. C.; Mann, K. R. Chem. Mater. 2004, 16, 4436.
41. Chua, L. L.; Zaumseil, J.; Chang, J. F.; Ou, E. C. W.; Ho, P. K. H.; Sirringhaus, H.; Friend, R. H. Nature 2005, 434, 194.
42. Silberzan, P.; Leger, L.; Ausserre, D.; Benattar, J. J. Langmuir 1991, 7, 1647.
43. Pernstich, K. P.; Haas, S.; Oberhoff, D.; Goldmann, C.; Gundlach, D. J.; Batlogg, B.; Rashid, A. N.; Schitter, G. J. Appl. Phys. 2004, 96, 6431.
44. Vegard, L. Z. Phys. A: Hadrons Nucl. 1921, 5, 17.
45. Denton, A. R.; Ashcroft, N. W. Phys. Rev. A 1991, 43, 3161.
46. Knipp, D.; Street, R. A.; Volkel, A.; Ho, J. J. Appl. Phys. 2003, 93, 347.
47. Kitamura, M.; Arakawa, Y. J. Phys.-Condes. Matter 2008, 20, 184011.
48. Di, C. A.; Yu, G.; Liu, Y. Q.; Guo, Y. L.; Sun, X. N.; Zheng, J.; Wen, Y. G.; Wang, Y.; Wu, W. P.; Zhu, D. B. Phys. Chem. Chem. Phys. 2009, 11, 7268.
49. Briggs, D.; Seah, M. P. Pracical surface analysis; John Wiley & Sons: Teddington, UK, 1994.
50. Northrop, B. H.; Houk, K. N.; Maliakal, A. Photochem. Photobiol. Sci. 2008, 7, 1463.
51. Chen, M. C.; Kim, C.; Chen, S. Y.; Chiang, Y. J.; Chung, M. C.; Facchetti, A.; Marks, T. J. J. Mater. Chem. 2008, 18, 1029.
52. Seo, J. H.; Pedersen, T. M.; Chang, G. S.; Moewes, A.; Yoo, K. H.; Cho, S. J.; Whang, C. N. J. Phys. Chem. B 2007, 111, 9513.
53. Parisse, P.; Picozzi, S.; Ottaviano, L. Org. Electron. 2007, 8, 498.
54. Kafer, D.; Ruppel, L.; Witte, G. Phys. Rev. B 2007, 75, 085309
55. Satta, M.; Iacobucci, S.; Larciprete, R. Phys. Rev. B 2007, 75, 155401.
56. Tsetseris, L.; Pantelides, S. T. Phys. Rev. B 2007, 75, 153202.
57. Klauk, H.; Zschieschang, U.; Weitz, R. T.; Meng, H.; Sun, T.; Nunes, G.; Keys, D. E.; Fincher, C. R.; Xiang, Z. Adv. Mater. 2007, 19, 3882.