在本論文中我們介紹三維錐形光耦合器與脊狀矽線波導在經純氫煅燒跟熱氧化過程中會自動整合在一起。我們使用BPM來模擬我們設計的元件結構，包含脊狀矽線波導的單模截止狀態的計算和三維錐形光耦合器的耦合效率。製程部分使用超高真空(~10-7torr)煅燒技術來製作一脊狀矽線波導波導，並觀察到有跟純氫煅燒製程出現相同的底切(under cut)的狀態。量測部分使用直接對準光纖跟耦合器來量測所製程之波導結構的傳播損耗為1.26dB/cm跟耦合器的損耗2.5dB/taper
length。

Demonstrated a novel silicon wire as well as a 3-D tapered coupler can be formed simultaneously through hydrogen annealing process. We use BPM to simulate our device structure, including the mode profile and coupling efficiency of the 3-D tapered coupler. We demonstrated ultra-high vacuum annealing can be used for fabricating the silicon wire waveguide, and observed the under-cut between the Si/SiO2 interface which is also shown in hydrogen annealing. We used cut-back method to measure the propagation loss and the coupler loss in our silicon wire waveguide, and found the propagation loss and coupler loss are 1.26(dB/cm) and 2.5(dB/taper length), respectively.

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