摘要

由於近年的科技快速進步，光偵測器在生活中的應用日漸增加，使的人們對於它的效能跟速率要求也隨之提升，因此在標準製程條件下設計出響應度高且高速率的光偵測器為本論文所追求的目標。
本文的光偵測器是利用TSMC 0.18 m SiGe BiCMOS製程來實現，主要是異質接面雙載子光電晶體(Heterojunction Phototransistor，HPT)的運用。使用之前實驗室提出的Body Strapping理論，再加上改變Body接點摻雜的型態，來提高HPT的響應度和反應速度。先利用Silvaco的atlas軟體模擬，發現改變Body接點摻雜型態可以提高響應度和速度，最後藉由下線實作晶片與量測晶片來得到模擬數據的驗證。
另一部分則是用CMOS製程實現橫向光電晶體(Lateral Phototransistor，LPT)，由於一般高響應度的HPT結構大多為縱向，且常需要在SiGe BiCMOS製程環境中才可以實現，所以希望可以在便宜的CMOS製程下，利用NMOS來達成有Body Strapping結構的LPT。由於在0.18µm CMOS製程下可將Base區域的寬度縮短，再加上Body Strapping的效果，希望可以完成高響應度的光偵測器。本文對於LPT的設計加以討論。

Abstract

Due to the rapid progress in technology, the demand of photodetectors has increased dramatically, and people keep pursuing devices with better performance. The purpose of this thesis is to design high-speed heterojunction phototransistors with outstanding responsivity under standard manufacturing process provided by TSMC. In this thesis, 0.18m SiGe BiCMOS standard process provided by TSMC is applied. At the first part of this paper, we will discuss the properties of heterojunction phototransistors (HPT) with body strapping which was proposed before by our laboratory, including its performance under different types of body contact (in order to acquire better responsivity) from both stimulation of T-CAD Silvaco and actual measurement. Most of the high performance HPT today use vertical structures, and lots of them need to apply BiCMOS process which has higher cost. Here, we try to implement a lateral phototransistor (LPT) under standard CMOS process by using n-type MOSFET with body strapping structure. With body strapping, we expect to improve the responsivity of LPT. In the following sessions, we will discuss further details of the design and measurements.

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