化學機械研磨(Chemical-Mechanical Polishing)普遍應用於半導體先進製程，主要製程目的為達成全域平坦化(Global planarization)。而在製程尺度縮至奈米級別的現今，CMP製程需要控制之平坦度也隨之越精確。多種因子的影響之下，實際的CMP系統非常複雜並且以傳統模型預測非常具有挑戰性。
　　近年各研究團隊將深度學習技術引入，提出以機器學習之方法進行CMP之預測，與傳統模型相較，機器學習在許多方面皆有較佳之預測表現。然而機器學習方法有多種演算法與架構，本研究將列舉數種機器學習模型並且以貝式最佳化優化之，發現因溫度殘留效應，BiLSTM(Bi-directional Long Short-Term Memory)演算法對於CMP之資料集在各項指標具有壓倒性之表現。更進一步將此模型導入並改善個案CMP製程之平坦度能力與產出，進一步提升晶圓良率與品質。

Chemical-Mechanical Polishing (CMP) is a general manufacturing process used to achieve global planarization in the semiconductor industry. Nowadays, the smaller the semiconductor’s design rules are, the more precise the CMP process should be. Since the actual CMP system is very complicated and dependent on various conditions, the efficient prediction of flatness results using traditional models becomes more challenging.
In the past few years, machine learning skills have been introduced to CMP; many algorithms and structures have been developed accordingly. Compared with traditional models, the machine learning one demonstrates superior performance in every aspect. Also, many algorithms have been proposed. In this study, we evaluated various Neural-Network algorithms and modified them via Bayesian optimization. Since the residual temperature affects CMP systems, the Bi-directional Long Short-Term Memory (BiLSTM) algorithm has an overwhelming advantage over other evaluated models. In this study, optimal hyperparameters have been found. Furthermore, the proposed model has been implemented on-site to significantly improve the CMP flatness capability and throughput for a specific case.

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