C-軸優選氮化鋁薄膜成長及其體聲波元件(FBARs)之研究

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研究生：	林永振 Yung-Chen Lin
論文名稱：	C-軸優選氮化鋁薄膜成長及其體聲波元件(FBARs)之研究 Synthesize Highly-textured AlN Thin Film and Study on Its Application to Thin Film Bulk Acoustic Wave Resonators
指導教授：	戴念華 Nyan-Hwa Tai 林諭男 I-Nan Lin
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2004
畢業學年度：	92
語文別：	中文
論文頁數：	86
中文關鍵詞：	聲波元件、氮化鋁
外文關鍵詞：	FBARs, acoustic, AlN
相關次數：	點閱：2 下載：0
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高頻聲波元件(FBAR)是未來無線通訊領域中很重要的技術，由於體聲波元件的開發使的濾波器及共振器的尺寸大幅的下降，在厚度上也進入了薄膜的尺寸，除此之外，體聲波元件有非常好的聲波特性，如:在高頻損耗低、整合性佳、功率忍受度高…等特性，所以這是一個非常有研究潛力的技術。
高頻聲波元件的開發有兩大重點，第一點是結構與線路設計;第二點是壓電材料，實驗中結構設計利用背向蝕刻矽晶的懸空結構來減少元件的損耗，導波的結構利用兩端(two port)的共平面結構，將聲波耦合到共振器元件。材料選用氮化鋁壓電材料，利用射頻濺鍍法低溫(不加熱)成長優選的氮化鋁薄膜，利用鋁靶提供鋁原子，在腔體中通入氮氣及氬氣，氮氣會在電漿中分解提供氮原子來源。由於只有C-軸優選的氮化鋁薄膜擁有壓電的特性，製程中在較高的氮氣比例及較短的基板到靶材距離可以成長出C-軸優選的氮化鋁薄膜，不論在任何基板上。因為聲波元件結構上的考量，必需將氮化鋁薄膜成長在金屬電極上，平常在低溫的環境下很難在金屬上得到好的C-軸優選及結晶性，實驗中選用一些金屬材料可成長為原子間距接近氮化鋁(002)平面的材料，藉著原子間距接近使氮化鋁易堆積成最密堆積面，進而改善薄膜結晶性。

第一章 簡介………………………………………………  1
第二章 文獻回顧…………………………………………  4
2-1 氮化鋁的結構與特性……………………………………   4
   2-1-1氮化鋁的結構…………………………………….   4
2-1-2氮化鋁的特性…………………………………….   5
2-2 氮化鋁薄膜的成長………………………………………   6
   2-2-1物理氣相沉積…………………………………….   7
   2-2-2化學氣相沉積…………………………………….   8
2-3 高頻聲波元件的發展……………………………………   9
   2-3-1 高頻聲波元件的基本結構………………………  10
 2-3-2 高頻聲波元件的基本原理………………………  12
       2-3-2.1 壓電效應…………………………………    12
          2-3-2.2 聲波的基本特性…………………………    13
          2-3-2.3 One-Dimensional Mason’s Model……    17
    2-3-2.4 共振器頻率響應………………………………   18
       2-3-2.5 BUTTERWORTH-VAN DYKE Equivalent Circuit  20
第三章 實驗製程…………………………………………  22
   3-1 氮化鋁薄膜製程簡介……………………………………   22
      3-1-1 鍍膜設備…………………………………………   22
      3-1-2 鍍膜步驟…………………………………………   24
  3-2 體聲波元件的製程………………………………………   25
      3-2-1 元件製程步驟……………………………………   26
      3-2-2元件完成圖(OM)…………………………………    31
第四章 結果與討論……………………………………    36
  4-1 氮化鋁薄膜在白金及Si(100)基板成長情形…………    36
    4-2 可幫助氮化鋁(002)優選的電極材料或緩衝層………    43
    4-3 金屬電極的結構特性…………………………………     46
    4-4 氮化鈦緩衝層的成長…………………………………     49
    4-5 成長氮化鋁在金屬電極上……………………………     52
    4-6 體聲波元件的電性分析………………………………     58
        4-6-1 元件頻率響應的模擬…………………………     58
        4-6-2 FBAR元件的電性分析…………………………     68
      4-6-3 有效機電耦合係數(kt2)的計算………………     75
       4-6-4 利用BVD Model探討電極面積影響……………   76
第五章 結論………………………………………………  79
參考文獻…………………………………………………… 82
附錄一……………………………………………………… 85
附錄二……………………………………………………… 86

                                

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