單一CIGS靶材濺鍍製程有大面積均勻、不須使用毒性氣體、不須後硒化處理等優點，卻有硒供給不足的問題。 本論文利用雷射加熱的方式，在濺鍍CIGS四元靶材的製程中提供額外的硒氣氛，成功地增加薄膜中的硒含量並得到較大的CIGS晶粒。藉由加入NaF前驅層能夠進一步地增加硒含量、消除薄膜內的深層缺陷，隨著前驅層厚度的增加也會改變吸收層的表面形貌。以此製程能夠以一階段製備吸收層，並達到11.4%的轉換效率。雖然NaF前驅層能夠進一步增加薄膜中的硒含量，卻也讓載子濃度過高，空乏區寬度過窄而無法有效吸收入射光。接著我們探討額外硒供給以及NaF後退火處理的效應，並以額外硒供給搭配NaF後退火處理，成功達到12.3%的光電轉換效率。

The process of sputtering quaternary-CIGS target is simple and straightforward. It can be used for larger area samples without the need of toxic gas and post-selenization. However, Se loss during the high temperature substrate is the main issue in this process. In this work, we try to increase the selenium supply during the process by heating selenium pellets up with laser, and we can observe larger CIGS grain and higher selenium content in the absorber. By adding NaF precursor , higher selenium content and different morphology is observed. Sodium may also decrease the deep defects in the film. 11.4% can be achieved by NaF precursor and extra selenium supply. NaF precursor can increase the selenium amount in the film, but it also leads to higher carrier concentration and narrow depletion width which give poor absorption of incident light. Finally we discuss the effects of extra selenium supply and NaF post deposition treatment (NaF-PDT). 12.3% can be achieved by NaF-PDT after extra selenium supply

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