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研究生: 林怡秀
Lin, I-Hsiu
論文名稱: 大氣電漿氧化矽鍍膜之研究
Investigations of SiOx thin films by an atmospheric plasma source
指導教授: 寇崇善
Kou, Chwung-Shan
口試委員: 黃振昌
劉偉強
學位類別: 碩士
Master
系所名稱: 理學院 - 物理學系
Department of Physics
論文出版年: 2011
畢業學年度: 99
語文別: 中文
論文頁數: 78
中文關鍵詞: 大氣電漿六甲基矽氧烷
外文關鍵詞: LAPPJ, HMDSO
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  • 本研究利用介質屏障放電(dielectric barrier discharge,DBD)進行大氣輝光放電,以六甲基矽氧烷(Hexamethyldisiloxane,HMDSO)為單體,混合氧氣、氫氣、氮氣、氬氣鍍膜。探討單體流量、混合不同氣體所製備之薄膜。並利用傅氏轉換紅外線光譜儀(FT-IR)、化學分析電子儀(ESCA)、接觸角量測系統、橢圓偏光儀(ellipsometer)、原子力顯微鏡(AFM)、紫外光-可見光光譜儀(UV-Vis)及鉛筆硬度測試薄膜特性。


    第1章 簡介 1 1.1 大氣電漿源 1 1.2 DBD的特性及分類 3 1.3 DBD放電原理 5 1.3.1 Streamer breakdown 6 1.3.2 Townsend breakdown 7 1.4 產生glow discharge條件 8 1.5 Hexamethyldisiloxane (六甲基矽氧烷,HMDSO)簡介 10 1.6 HMDSO在電漿中的反應 11 第2章 實驗儀器與操作流程 12 2.1 實驗系統 12 2.2 實驗流程 16 2.3 分析儀器 18 2.3.1 傅立葉轉換紅外線光譜儀(Fourier Transform Infrared Spectroscopy,FT-IR) 18 2.3.2 接觸角量測系統 19 2.3.3 化學分析電子能譜儀(Electron Spectroscopy for Chemical Analysis,ESCA) 23 2.3.4 原子力顯微鏡(Atomic Force Microscope,AFM) 24 2.3.5 橢圓偏光儀 27 2.3.6 紫外光-可見光光譜儀(UV-Vis) 31 2.3.7 鉛筆硬度測試機 31 第3章 數據分析與討論 32 3.1 改變HMDSO的流量 35 3.2 HMDSO混入O2 50 3.3 HMDSO混入H2 60 3.4 HMDSO混入N2 66 3.5 HMDSO混入Ar 70 第4章 結論 75 4.1 實驗結論 75 4.2 建議事項 76 參考文獻 77

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