本研究使用CMOS標準製程製作電容式加速度感測器的製作，由於元件的初始電容值極小(約數百fF)，因此電容式加速度計的感測電路通常需具備抵抗雜訊、高靈敏度與高解析度等特性。本研究改良「基於電荷特性之電容量測法」(Charge-based Capacitance Measurement，CBCM)作為加速度計的電容讀取電路，藉由CBCM電路本身可用來量測fF等級的靜態電容且具有高解析度等特性，將其設計成能感測加速度計動態電容的感測電路，提供現有微機電電容感測電路另一途徑。本研究透過國家晶片系統中心所提供的TSMC 0.18 μm 1P6M CMOS製程平台，將單軸電容式加速度計與CBCM電容感測電路整合至單一晶片上，經過後製程處理後可成功將元件懸浮。經由模擬可知，此加速度計的共振頻率為4.3 kHz，且在1 G下具有0.9 fF的電容變化量，搭配所設計的電容感測電路可將1 fF的電容變化量轉換成約35 mV的電壓變化量，可得元件整體靈敏度達31.5 mV/g，感測電路的輸出雜訊則為29.8 μg/√Hz。另外，經由晶片的測試電路可量測到fF等級的電容值，驗證了CBCM電容感測電路的可行性。

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