高功率氮化鎵高電子遷移率場效電晶體在藍寶石及矽基板之研究

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研究生：	吳嘉益 Jia-Yi Wu
論文名稱：	高功率氮化鎵高電子遷移率場效電晶體在藍寶石及矽基板之研究 High power GaN-Based HEMTs on Sapphire and Silicon Substrates
指導教授：	徐碩鴻 Shuo-Hung Hsu
口試委員:
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	英文
論文頁數：	70
中文關鍵詞：	氮化鎵、異質結構場效電晶體
外文關鍵詞：	GaN, HEMT, high electron mobility transistor
相關次數：	點閱：1 下載：0
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本論文主要研究氮化鎵異質結構場效電晶體在矽基板及藍寶石基板上對於高功率與微波方面的應用。這些具有400 □m閘極寬度的功率元件展現了300 mA/mm高的最大電流密度，以及80 mS/mm 的轉導係數。這些結果也指出元件在矽基板上亦可獲得較佳的特性，並且不同形狀的元件結構被採用來觀察不同的幾何形狀對崩潰耐壓及其他的非理性效應的影響，包含了閘極漏電流與低頻雜訊，而這些形狀則為指叉狀、矩形及圓形結構。如預期中的結果，這些封閉式結構的矩形和圓形電晶體在藍寶石基板中展現了高達650伏特的崩潰耐壓，這同樣也驗證了擁有較多根的指叉狀閘極會展現出較嚴重的缺陷影響，這些缺陷是來自於蝕刻平臺隔離時所伴隨產生的破壞。基於這個現象，封閉式結構的元件有效的避免了這些缺陷並提高了部分元件特性，從實驗的結果觀察到封閉式結構比指叉狀結構擁有較少的低頻雜訊和較好的崩潰耐壓。最後，元件的微波特性也是研究的目標之一，量測閘極長度為2 □m及寬度為2 mm元件，可求得達3.4 GHz的截止頻率及8.0 GHz的震盪最大頻率，倘若閘極長度縮小至可和業界元件相比的長度時，其結果和業界的成果可說是相近的。

ABSTRACT............. I
摘要.................II
ACKNOWLEDGEMENT.....III
CONTENTS.............IV
CHAPTER 1    1
1    RESEARCH BACKGROUND    1
2    THESIS ORGANIZATION    2
CHAPTER 2    3
1    POWER DEVICE AND WIDE BANDGAP MATERIALS    3
1.1    Wide bandgap materials    4
1.2     Saturation electron velocity    5
1.3     Breakdown voltage versus on - resistance    6
2    ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS)    7
2.1     Polarization and 2DEG mechanism    9
3    LAYER STRUCTURE    11
3.1     Buffer and GaN layer    11
3.2     Considerations of AlGaN layer    11
3.3     SiNX passivation after forming Schottky and Ohmic contacts    12
CHAPTER 3    13
1    FIELD PLATE ENGINEERING    13
1.1    Designs with field plate engineering    14
2    LAYOUT OPTIMIZATIONS    15
2.1    Closed-gate structure with a field plate    16
3    DESIGN OF RF DEVICE    18
4    MEASUREMENT METHOD    20
4.1    Drain lag and gate lag measurements    20
4.2    Capacitor – voltage measurement    21
4.3    Flicker noise measurement    21
CHAPTER 4    23
1    MESA ISOLATION    26
1.1    Lithography    27
1.2    Mesa isolation etch    28
2    OHMIC CONTACT    28
2.1    Surface treatment    29
2.2    Metal Evaporation    29
2.3    Lift-off    30
3    SCHOTTKY GATE    31
4    PASSIVATION    31
5    FIELD PLATE ENGINEERING    32
CHAPTER 5    33
1    ON-STATE CHARACTERISTICS    33
1.1    ID-VD characteristics    33
1.2    ID-VG characteristics    34
1.3    Results and discussions of on-state characteristics    34
2    OFF-STATE CHARACTERISTICS    41
2.1    Leakage current    42
2.2    Breakdown voltage    42
2.3    Results and discussions of off-state characteristics    42
3    AC AND RF CHARACTERISTICS    46
3.1    Drain lag and gate lag measurements    46
3.2    RF measurement results    49
3.3    CV measurement results    52
4    GAN-BASED SCHOTTKY VARACTORS    54
4.1    Varactor layouts    54
4.2    Varactor measurement results    55
4.3    Conclusion    56
CHAPTER 6  FUTURE WORK    59
REFERENCES    60

                                

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