發光二極體的光學耗損主要來自於各個介面折射率的不同，而造成全反射的問題。我們雖然提出了於藍寶石基板背面製作光子晶體，利用其對光線繞射的原理來避開空氣與氮化鎵介面的全反射問題，但是在藍寶石基板與氮化鎵的介面依然會有全反射的問題，限制了出光效率的提升。
本論文提出一種製程，將布拉格反射鏡以及三維光子晶體等光學結構直接製作於氮化鎵上，我們使用基板轉移技術，選擇基板材質為藍寶石基板的氮化鎵磊晶片，使用基板黏合製程以及雷射剝離製程轉移基板，使氮化鎵層的背部裸露出來，直接於氮化鎵的表面製作光學結構。將光學結構由發光二極體基板的背部，移置氮化鎵與基板之間的位置，期望能達到增進發光二極體出光效率的效果。
我們分別使用了四種黏著劑作為基板轉移製程的測試，發現Su-8 以及BCB這兩款黏著劑可以應用於基板轉移製程。我們使用Su-8作為黏著劑，進行基板轉移製程後，於氮化鎵層製作布拉格反射鏡進行後續的晶粒製程，製作出發光二極體並進行電性與發光特性的量測。
之後我們改用性質更加穩定的黏著劑BCB，配合材質為SiNx的犧牲層，使用於基板轉移製程，同時也將高溫製程往前挪動至接合製程前，避免後續的高溫製程影響到黏著劑的接合力。配合對位式的雷射剝離製程使晶粒良率提升，再使用雷射干涉微影技術在氮化鎵表面製作二維週期性結構，將三維的自我複製式光子晶體製作於氮化鎵表面。

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