單晶矽為半導體晶片常用之基板材料，但在封裝過程若設計不當則有可能因材料間熱膨脹係數不匹配而造成晶片破壞。許多學者藉由各種測試方式期望能得到矽晶片的破壞強度以改善製程良率，並發現當單晶矽試片尺寸縮小時其強度上升。然而，當製造較小尺寸試片時由於製造方式改變會造成粗糙度的改變，並影響破壞強度。因此，本研究的目的在於建立一套方法以獲得帶有粗糙度影響之破壞強度。
由於實驗結果顯示側面粗糙度的影響較表面粗糙度的影響大，因此本研究聚焦於側面粗糙度對破壞強度的影響。首先，利用光學顯微鏡配合影像處理技術重建試片的側面粗糙度曲線，並獲得最大粗糙度高度R_max以及平均波峰間距S_m等粗糙度參數。接著，進行三點彎折實驗以獲得試片破壞時所需位移，並擬合韋伯分布曲線獲得最大近似估計量。最後，把粗糙度參數以及破壞時所需位移代入有等效凹槽的有限元素模型並進行求解，可得到試片破壞時凹槽頂端之第一主應力，即帶有側面粗糙度影響的單晶矽破壞強度。
結果顯示帶有側面粗糙度影響的單晶矽破壞強度約為2.7 GPa，此數值與文獻相比在合理範圍內。儘管如此，本方法在表面存在研磨痕跡且痕跡與側面接近垂直時會造成高估的結果，若利用在表面拋光後的試片可望有較合理的結果。

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