鈍氣族在物質中的特性已被研究了超過半個世紀，而鈍氣族在物質中所形成的氣泡會影響材料的特性。在本次的實驗中，我們將氬以1 keV的低能量轟擊至高溫的矽(111)中，氬在矽靠近表面的區域形成氣泡使表面隆起，形成"腫塊(bumps)"，我們所要關注的就是這些隆起的腫塊的特性。從實驗結果中，我們觀察到了腫塊的兩種形式，碟面向上腫塊(face-on bumps)以及邊緣向上腫塊(edge-on bumps)，兩種腫塊對於氬釋出的條件不同，邊緣向上腫塊因其在表面的幾何結構較容易釋出氬。此外，我們也觀察到了腫塊的周邊有因隆起而產生的裂縫，這些裂縫以及塌陷的腫塊的邊緣都順著<-110>以及<11-2>兩個方向形成，而邊緣向上腫塊則會順著<-110>形成。腫塊表面所形成的非7 × 7區域以2 × 2和c(2 × 4)為主

Due to the formation of rare gas bubbles in materials will affect the properties of materials, the behavior of rare gases in materials have been investigated more than half century. In our work,low energy (1 keV) Ar ions were used to bombard high-temperature Si(111) surfaces to form surface bumps which are caused by the generation of Ar-filled inclusions beneath the surface. What we concerned about is the characteristics of surface bumps. From the experimental results,we observed two forms of bumps – the face-on and edge-on bumps. The two kinds of bumps have different conditions for the release of argon atoms in the bump. The edge-on bumps are more likely to release argon atoms due to its surface geometry. In addition, we also observed surface cracks on the bump edge due to the bulging.These cracks and collapsed edges of face-on bumps are along <-110> and <11-2> direction,and that of edge-on bumps are along <-110> direction.The non-7 × 7 area formed on the bumps is dominated by 2 × 2 and c(2 × 4).

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