利用量子侷限的效應可使矽成為發光材料，而近年來以矽作為發光元件的研究日益增加，本論文討論奈米晶矽的電激發光現象並設計製作面射型之共振結構，使得以矽為發光元件的出光強度增加及光譜半高寬窄化的現象。其中，奈米晶矽是以電漿化學氣相沉積系統所製備，改變製成氣體SiH4及N2O的流量比沉積出富含矽之氧化矽，再以真空高溫退火的方式使矽析出形成奈米晶矽，作為主動發光層，其光致發光和電激發光的波峰位置皆為600奈米，光譜半高寬約為200奈米左右。而面射型共振腔結構是以金薄膜和矽與二氧化矽交互堆疊的布拉格反射鏡所構成，其原理相似於Fabry-Perot，再控制薄膜金的厚度，使之不僅作為反射鏡並也成為元件的出光層。而根據Rsoft軟體的時域有限差分法(FDTD)模擬以及實驗量測結果，可知藉由微調金的膜厚使得共振腔發光元件的光強度提升、共振波長和光譜半高寬的改變，若與無共振腔結構的奈米晶矽發光元件相比較，具共振腔結構的元件光譜強度約強六倍，光譜之半高寬窄化了約七倍，從奈米晶矽發光光譜半高寬的215奈米窄化為30奈米。研究證實共振結構可應用於矽發光元件並可提高發光強度以及窄化光譜純度。

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