本研究進行矽光微環型調變器和鍺光偵測器的頻寬的近一步提升，基於等效電路模型分析元件電光與光電轉換的行為，再搭配平面螺旋電感在特定頻率產生共振增益，藉此提升轉換效率與頻寬；另外提出高調變線性度雙注入微環型調變器，我們的架構可以調整波導中的相位，實現Fano和Lorentz光頻譜響應，並分析共振波長偏移對線性度的影響。我們量測的SFDR可以超過商用LiNbO3馬赫-曾德爾干涉儀調變器。
我們模擬的結果，矽光微環型調變器的頻寬從原本的70GHz提升至超過110GHz，而鍺光偵測器的頻寬則從80GHz提升至120GHz，對兩者提升約30GHz的頻寬；雙注入微環型調變器在Fano與Lorentz共振條件下的頻寬分別為54GHz與67GHz，Lorentz和Fano共振微環型調變器在1GHz頻率下的最佳SFDR分別有93.77dB⋅Hz^2/3和104.54dB⋅Hz^4/5。

This study focuses on further enhancing the bandwidth of silicon microring modulators and germanium photodetectors. Based on an equivalent circuit model, we analyze the electro-optic and optoelectronic conversion behavior of these devices. Additionally, we incorporate a planar spiral inductor to generate resonance gain at specific frequencies, thereby improving conversion efficiency and bandwidth. Furthermore, we propose a high-linearity double-injection microring modulator. Our design allows for phase adjustment within the waveguide to achieve Fano and Lorentz optical spectral responses and investigates the impact of resonance wavelength shifts on linearity. Our measured SFDR exceeds that of commercial LiNbO₃ Mach-Zehnder interferometric (MZM) modulators.
According to our simulation results, the bandwidth of the silicon photonic microring modulator is increased from 70 GHz to over 110 GHz, while the bandwidth of the germanium photodetector is enhanced from 80 GHz to 120 GHz, achieving an improvement of approximately 30 GHz for both devices. The bandwidth of the double-injection microring modulator under Fano and Lorentz resonance conditions is 54 GHz and 67 GHz, respectively. The SFDR of the Lorentz and Fano resonance microring modulators are 93.77 dB·Hz^2/3 and 104.54 dB·Hz^4/5, respectively.

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