本研究探討利用陽極複合沉積法製備釕氧化物-鈦氧化物複合電極以及釕氧化物-石墨烯/奈米碳管複合電極於超級電容器之應用。經由改變成長溫度與複合鍍液組成比例對釕氧化物-鈦氧化物複合電極作系統性的研究；並先以微波輔助水熱法(microwave-assisted hydrothermal elimination method)製備還原程度不同之石墨烯來探討陽極複合沉積上機制的差異後，選擇添加高孔洞結構、高比表面積之石墨烯/奈米碳管，來觀察材料以及電化學上的特性。在材料分析方面，經由掃描式電子顯微鏡(scanning electron microscopy,SEM)來觀察表面型態、能量散射光譜儀(Energy Dispersive Spectrometer,EDS)分析組成、拉曼光譜(Raman spectroscopy)作定性分析、X光繞射儀(X-ray diffraction,XRD)觀察其結構上的變化、穿透式電子顯微鏡(transmission electron microscopy,TEM)分析其微結構以及利用熱分析儀(Thermogravimetric analysis, TGA)研究複合電極之重量損失與其水含量。經由循環伏安行為、可逆性測試以及不同掃描速率之影響來觀察其電化學的特性。
首先發現加入鈦氧化物於鍍液中，並不會影響釕氧化物的沉積行為。當成長溫度在35 oC時，釕氧化物成長速率非常慢且不連續；而當成長溫度於65 oC 時，會因釕氧化物成長太快而有氧化物的掉落，故以50 oC為氧化物最佳的成長溫度。接著由電極剖面(cross section) EDS分析結果發現，可藉由改變溶液組成進而控制複合氧化物中鈦氧化物含量；且皆具有粗糙的表面型態，符合熱分析儀結果。隨著鍍層中鈦氧化物含量的增加，整體比電容呈現逐漸下降的趨勢，當鈦氧化物含量為23 wt%時，電極整體電容量可達最大值約500 F/g；又當鈦氧化物含量為36 wt%時，可達最高釕氧化物的利用率為773 F/g。
之後添加0.9 g/L的石墨烯/奈米碳管溶液於鍍液中，同樣利用陽極複合沉積法製備釕氧化物-石墨烯/奈米碳管電極。其表面形態為不規則3D片狀排列之蓬鬆結構，由元素分佈分析得知，釕氧化物與石墨烯/奈米碳管是整體性且連續性的沉積。此外，以TEM確定此複合材料具有奈米等級的混合程度；最後以TGA間接推斷其結構具高度孔洞性。經熱處理效應之電化學分析，得知以150 oC為熱處理溫度時釕氧化物-石墨烯/奈米碳管電極具最理想之電容行為，其比電容值達973 Fg-1，且其掃描速率與峰電流呈線性關係，而電容保持率為最高約為60.5%。故釕氧化物-石墨烯/奈米碳管電極經150 oC熱處理 2小時後可達最佳之儲能性質，比能量密度與比功率密度分別達144.6 Whkg-1與157.5 kWkg-1。

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