Pb(Zr1-xTix)O3 (PZT)材料具有多項優異特性，適合發展很多功能性之元件。但是要將PZT材料開發於元件應用時，會遭遇許多材料問題，比如與Si基板擴散問題、與金屬電極之接面問題，還有最重要之製程溫度問題，如果沒有辦法同時解決目前存在之這些問題，這將使得PZT元件於開發上受到很大之限制，而無法實用化。本研究以材料製程為開發重點，利用BMT材料結構與晶格常數與PZT匹配以及可於低溫合成之優點，積極開發BMT為PZT材料緩衝層。同時由於BMT本身為最優良之微波介電薄膜，開發過程同時利用微波探針系統(EMP)，量測(100)優選BMT薄膜之微波介電特性(K=22.0 & tanδ=0.0043)。
接下來利用低溫雷射剝鍍製程，搭配BMT緩衝層之使用，解決了PZT材料與Si基礎基板之交互擴散問題，由於PZT材料之成長完全依賴PZT，因此透過製程參數之調變，探討BMT結晶性與表面形貌對於PZT薄膜成長之影響，並透過TEM之分析建立PZT材料於BMT材料上成長之模型，同時藉由C-V之量測Pt/PZT/BMT/Si結構，可以在400℃製程溫度之薄膜，得到8.0 V之記憶窗。同時間PZT材料與金屬電極介面會產生之鐵電疲勞問題，本研究亦利用BMT緩衝層隔開PZT與金屬之間之接觸形成，BMT/PZT/BMT三明治結構，可以在400℃製程溫度開發出Pr=29.7 μC/cm2與EC=82.5之優良鐵電薄膜，同時經過鐵電疲勞測試，鐵電特性經過1011次之測試，仍不會有下降之趨勢，使得PZT材料更接近於鐵電記憶體之應用。
同時利用製程參數之調整在Sapphire基板上低溫合成高品質(100)之PZT薄膜。如此高品質之薄膜，可以應用於表面聲波元件，更可利用PZT之非線性特性，開發成為可調頻之微波元件，以及PZT之聲光或電光效應，開發成為光學主動元件。為了確定應用之可行性，本研究亦對高品質之PZT薄膜進行微波介電特性(K=105.9 & tanδ=0.0121)與光學特性(n=2.30 & β=2.46 dB/cm)之量測。
為了使PZT高品質薄膜更貼近應用，不受成長基板之限制，積極開發雷射剝離技術，將PZT薄膜成功由sapphire成長基板轉移至Si應用基板，並保持其良好之鐵電特性(Pr=34.4 μC/cm2、EC=360 kV/cm)。同時亦利用低溫雷射剝鍍技術開發數種PZT材料之之奈米粉末與奈米柱，提供PZT材料應用於奈米領域更多形式之選擇。
目前無線通訊射頻前端之線路尺寸，主要受到高頻被動元件所主宰，所以高頻被動元件之微小化，乃為射頻前端線路縮小之主要關鍵，配合單石式微波積體電路之電路設計，才能達到單一系統晶片與降低成本之目標。目前主動元件主要利用薄膜技術來製作，因此高頻被動元件之薄膜化為此一趨勢成敗之關鍵。薄膜體聲波元件具有可整合與尺寸小之優點，為目前最熱門之開發元件。PZT材料應用於體聲波薄膜共振器，具有高機電耦合係數特性，可作為寬頻濾波器上之應用，是十分具有潛力的材料。
最後本研究建立PZT薄膜體聲波元件之分析基礎，透過適當之元件設計與製作流程，將之前400℃製程低溫開發之PZT/BMT薄膜整合於製程中，可以開發出PZT薄膜體聲波元件之雛形，透過製程之檢定，確定解決PZT薄膜應用於元件之材料問題。

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