在1990年，Holonyak的實驗室團隊展示了以濕式熱氧化方法所形成的穩定AlAs氧化層。由於此氧化層的物理性質以及元件上的應用特性，Al(Ga)As/GaAs的濕式氧化便廣泛引起各界的關注。在過去幾年中, Al(Ga)As的濕式氧化已經被成功地應用在垂直共振腔雷射(VCSEL)。然而，為了得到更好的金屬-絕緣體-半導體元件，我們追求良好絕緣層以達成GaAs 的CMOS科技,而這樣的需求卻尚未被滿足。
在實驗中，我們以低溫成長砷化鎵來改善氧化速率以及氧化層---半導體的介面品質。在磊晶片成長之後，此氧化層以濕式氧化的方式，使AlAs轉變成AlxOy。 XPS、PL、以及拉曼光譜被用來做此氧化層的分析。由此實驗，由數據所推算的氧化動力學參數A及B的活化能分別為0.23eV以及0.72eV。而最後，我們可證明存在於低溫成長砷化鎵中的鎵空隙，可以改善氧化速率以及介面品質。

In 1990, Holonyak’s group demonstrated a stable oxide of AlAs, formed by wet thermal oxidation, selective wet oxidation of Al(Ga)As/GaAs has generated intense interest in terms of its physical properties and device applications. Over the past few years, wet oxidation of Al(Ga)As has been successfully employed in the fabrication of various vertical-cavity surface-emitting laser (VCSEL) structure. However, there remains an unfulfilled need for a good insulator for metal-insulator-semiconductor to enable the GaAs-equivalent of Si complementary metal-oxide-semiconductor (CMOS) technology.
The aim of our experiments was to improve the wet oxidation rate and oxide-semiconductor interface quality by LT GaAs. The oxides were formed by direct wet thermal oxidization of AlAs into AlxOy during post-growth processing. XPS, PL, and Raman Spectra had been carried out for the oxide analysis. And the kinetics parameters A and B had been extracted to be the value of 0.23eV and 0.72eV, respectively. We conclude that the oxidation rate and interface quality had been improved by the propagation of Ga vacancies.

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