本論文使用國家晶片中心所提供的台灣積體電路公司0.18μm CMOS製程服務，並採用靜電驅動機制，成功實現了直流接觸式微機電系統開關元件。在結構設計上，我們使用平板開關結構做為開關元件的主體，提供非常一致的垂直位移以確保觸點區域的接觸品質。而折疊式彈簧則提供較低的彈簧剛性，同時也減緩了殘餘應力所造成的翹曲變形，用以大幅降低吸附電壓。在後製程上，使用複合的濕式蝕刻方式，保留了開關電極周圍的二氧化矽材料，使得結構更能抵抗來自環境的外力。而在需要有金屬接觸的區域留下了氮化鈦/鈦薄膜，使得微機電系統開關元件能夠利用化學活性較低的氮化鈦/鈦來實現金屬接觸。本論文最大的貢獻在於使用標準CMOS製程首次實現接觸式開關，而毋須使用額外的黃光微影或金屬沈積製程，相信對於亟需整合理想開關功能的CMOS電路而言，提供了一有效解決方案。
本論文所設計的開關元件之面積為295×225 μm2，目前所量測到的最低吸附電壓為21V，接觸電阻為368Ω，切換時間小於10μs，回復時間落在18μs。在0.1–10MHz頻率下的隔離度和插入損耗則分別為84.03–71.88dB和13.38–16.15dB。

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