摘要
氮化鈦和氮化鋯所具有的物理特性而被廣泛運用在VLSI的元件上，有關氮化鈦和氮化鋯的披覆製程已廣為人知，但有關於磊晶成長方面的研究則相對少很多，本研究前半部分為研究氮化鈦和氮化鋯於矽基板上的磊晶成長機制，經過高溫前置沉積層的步驟，可將後續氮化鈦和氮化鋯薄膜於Si(100)和Si(111)兩種指向基板上的磊晶溫度降低至100℃。而氮化鋯、氮化鈦和矽基板間磊晶相對關係為：
(200)TiN□(400)Si；[011]TiN□[011]Si
(200)ZrN□(400)Si；[011]ZrN□[011]Si
研究後半部分為利用成長於Si(100)和Si(111)上的磊晶氮化鈦膜為基板，成長氧化鋅奈米線，在氧化鋅和氮化鈦的界面處會產生具尖晶石結構的α-Zn2TiO4中間反應層。
於TiN/Si(100)的基板上，可長成直立式的氧化鋅奈米線，其磊晶方位關係為：[1-210]ZnO□[0-11]TiN□[0-11]Si
且 (0001)ZnO□(111)TiN□(111)Si
於TiN/Si(111)基板，可得四重對稱式氧化鋅奈米線，其磊晶方位關係為：：[1-210]ZnO□[0-11]TiN□[0-11]Si
且 (0001)ZnO R+γ□(111)TiN□(111)Si
其中R+γ表示ZnO(0001)面順時針轉動一個γ角。

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