本篇論文主題為使用分子束磊晶法(MBE)成長出品質良好的氮化銦鎵和氮化鎵奈米柱，我們在矽(111)基板上成長氮化銦鎵奈米柱，並使用掃描式電子束顯微鏡(SEM)得知奈米柱的形貌；也使用X-Ray繞射儀確定奈米柱的結構和結晶品質，並計算出晶格常數和其中所含銦金屬的濃度含量，由晶格常數為無應力的情形了解奈米柱結構良好的釋放掉因為跟基板晶格常數不匹配和熱膨脹係數不同所產生的應力；我們也使用光致激發光譜量測(Photoluminescence spectrum)分析確定氮化銦鎵奈米柱的發光波段以及品質，我們發現當其中銦的濃度含量較少時(<10%)，氮化銦鎵奈米柱發光特性確實比相同濃度的的二維氮化銦鎵薄膜來的好，而在高銦含量(>90%)的氮化銦鎵奈米柱方面，奈米柱的發光性質卻不如相同濃度的薄膜，我們解釋因為其有跟氮化銦相同的表面電荷累積的情形，並且奈米柱的表面積又較二維薄膜比例上來的多，所以發光效率反而較薄膜弱。
除了單根的氮化銦鎵奈米柱之外，我們也選擇成長了一直結構的奈米柱，即先成長一層氮化鎵奈米柱，再在其上成長氮化銦鎵奈米柱，我們發現有氮化鎵當緩層氮化銦鎵奈米柱比起直接成長在矽基板的奈米柱有著更好的發光效率及結晶性質，其在本論文中有分析比較。

[1] R. Juza and H. Hahn, Z. Anorg. Allg. Chem. 239, 282 (1938).
[2] B. D. Cullity, Elements of X-ray Diffraction (Addison-Wesley, Reading, MA, 1967).
[3] T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986)
[4] Herman, Marian A. Molecular beam epitaxy : fundamentals and current status, Springer-Verlag (1989)
[5] 許樹恩、吳泰伯。X光繞射原理與材料結構分析(修訂版)：中國材料科學學會 (1993)
[6] Katsumi Kishino et al., Jpn. J. Appl. Phys. Vol. 33 pp. L688–L693 (1994)
[7] Katsumi Kishino et al., Jpn. J. Appl. Phys. Vol. 36 pp. L459–L462 (1997)
[8] 張石麟。材料分析，汪建民主編：中國材料科學學會 (1998)。
[9] Katsumi Kishino et al., Journal of Crystal Growth 189/190 (1998)
[10] Braun, Wolfgang, Applied RHEED :reflection high-energy electron diffraction during crystal growth, Springer (1999)
[11] Katsumi Kishino et al., Jpn. J. Appl. Phys. Vol. 39 pp. L330–L333 (2000)
[12] Katsumi Kishino et al., Jpn. J. Appl. Phys. Vol. 40 pp. L192–L194 (2001)
[13] Bernard F. Erlanger et al.,Nano Letters 9 465-467 (2001)
[14] T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
[15] V. Y. Davydov et al., Phys. Status Solidi B 229, R1 (2002)
[16] J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
[17] V. Y. Davydov et al., Phys. Status Solidi B 230, R4 (2002).
[18] M. Hori, K. Kano, T. Yamaguchi, Y. Saito, T. Araki, Y. Nanishi, N. Teraguchi, and A. Suzuki, Phys. Status Solidi B 234, 750 (2002).
[19] V. Y. Davydov et al., Phys. Status Solidi B 234, 787 (2002).
[20] Saito, H. Harima, E. Kurimoto, T. Yamaguchi, N. Teraguchi, A. Suzuki,T. Araki, and Y. Nanishi, Phys. Status Solidi B 234, 796 (2002).
[21] T. Miyajima et al., Phys. Status Solidi B 234, 801 (2002)
[22] Yu Huang et al.,Nano Letters 2 101-104 (2002)
[23] Hwa-Mok Kim et al., Appl. Phys. Lett. 81, 12 (2002).
[24] C. H. Liang et al., Appl. Phys. Lett.. 81, No. 1, 1 (2002)
[25] Hai Lu, William J. Schaff, Lester F. Eastman, J. Wu, Wladek Walukiewicz, Volker Cimalla and Oliver Ambacher, Appl. Phys. Lett. 83, 1136 (2003)
[26] Hwa-Mok Kim et al., Chemical Physics Letters 380 181–184 (2003)
[27] Hwa-Mok Kim et al., Advanced Materials 15 No 3 (2003)
[28] L. W. Tu, et al., Appl. Phys. Lett. 82, No 10 (2003).
[29] Hwa-Mok Kim et al., Phys. Status Solidi B 241, 2802-2805 (2004)
[30] Hwa-Mok Kim et al., Journal of Ceramic Processing Research. Vol. 5, No. 3, pp. 241~243 (2004)
[31] Hwa-Mok Kim et al., Nano Letters, 4, 1059-1062 (2004)
[32] Katsumi Kishino et al., Jpn. J. Appl. Phys. Vol. 43 pp. L1524–L1526 (2004)
[33] Katsumi Kishino et al phys. stat. sol. (b) 241, No. 12, 2754–2758 (2004)
[34] Y. S. Park,et al., Appl. Phys. Lett. 85, No 23 (2004).
[35] Zon-Huang Lan et al., Advanced Materials 14 No 3 (2004)
[36] Hwa-Mok Kim et al., Appl. Phys. Lett. 87, 093115 (2005).
[37] Jelena Ristić et al., Physical Review B 72, 085330 (2005)
[38] Jelena Ristić et al., Physical Review Letters, 94, 146102 (2005)
[39] C. E. Pryor et al., Physical Review B 72, 205311 (2005)
[40] H. W. Seo et al., Physical Review B 71, 235314 (2005)
[41] N. A. Sanford et al., phys. stat. sol. (c) 2, No.7, 2357–2360 (2005)
[42] Sreeram Vaddiraju et al.,Nano Letters, 5 No 8 1625-1631 (2005)