研究生: |
蘇聖航 Su, Sheng-Hang |
---|---|
論文名稱: |
一個應用於感應器陣列之使用校正10位元行平行之逐次逼近寄存型類比數位轉換器 A 10-bit Column Parallel SAR ADC with Calibration for Sensor Array Applications |
指導教授: |
謝志成
Hsieh, Chih-Cheng |
口試委員: |
鄭桂忠
陳新 邱進峯 |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 電機工程學系 Department of Electrical Engineering |
論文出版年: | 2013 |
畢業學年度: | 101 |
語文別: | 英文 |
論文頁數: | 68 |
中文關鍵詞: | 類比數位轉換器 、行平行 、多分段電容式 |
外文關鍵詞: | analogue-to-digital converter, column-parallel, multiple segmented charge redistribution capacitive |
相關次數: | 點閱:4 下載:0 |
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摘要
本論文提出一個應用於感應器陣列式之十位元行平行處理(Column-Parallel)的類比數位轉換器(Analog-to-Digital Converter, ADC),為降低單一類比數位轉換器之功耗,本論文採用漸近式類比數位轉換器(Successive Approximation ADC)的架構,並利用功耗較低的電容式數位類比轉換器(Capacitive Digital-to-Analog Converter)來產生類比數位轉換過程中所需的參考電位。由於傳統電容式數位類比轉換器是造成漸進式類比數位轉換器面積過大的主要原因,在行平行處理的應用中由於要將之實現在行寬(Column Pitch)中,因此,本論文提出一多分段電容式數位類比轉換器(Multi-Segmented Capacitive DAC)以降低數位類比轉換器所占的面積與功耗。為了解決分段DAC固有的不匹配問題,本論文提出了一種新的數位校正方法,使得SNDR從51.79dB提升至57.63dB。
為了驗證本電路,本論文利用0.18微米CMOS製程來實現一原型實驗晶片。本實驗晶片操作在1V 的供給電源和4MS/ s 的採樣速率。在接近Nyquist 頻率所測得的有效位元數(ENOB),是9.28 位元。在經過校正後差動非線性誤差(differential non-linearity, DNL)由 +0.52 / -1 LSB 提升至 +0.62 / -0.65 LSB,積分非線性誤差(integrated non-linearity, INL)由 +3.2 / -3.1 LSB 提升至 +0.64 / -0.48 LSB。整顆晶片總功耗為53.5 微瓦,所計算的等效figure of merit(FoM)則為21.5fJ/Conversion-step。
ABSTRACT
This thesis proposes a 10-bit column-parallel successive approximation (SAR) analogue-to-digital converter (ADC) used for sensor array applications. A multiple segmented charge redistribution capacitive digital-to-analog converter (MS-C-DAC) is employed to reduce the area and power consumption. To solve the inherent mismatch issue of segmented DAC, a new digital calibration method is proposed, which improves SNDR from 51.79 dB to 57.63 dB.
The prototype experimental chip is fabricated by 0.18um CMOS technology. The prototype ADC operates with 1V supply and 4MS/s sampling rate. The measured effective number of bits (ENOB) at near Nyquist frequency is 9.28-bit. The differential non-linearity is reduced from +0.52 / -1 LSB to +0.62 / -0.65 LSB, and the integrated non-linearity is improved from +3.2 / -3.1 LSB to +0.64 / -0.48. The total power consumption of 53.5uW is achieved, and the resultant figure of merit (FoM) is 21.5fJ/Conversion-step.
Bibliography
[1] R. Hornsey, “Design and Fabrication of Integrated Image Sensors,” University of Waterloo.
[2] R. Kuttner, “A 1.2 V 10 b 20Msample/s non-binary successive approximation ADC in 0.13 m CMOS,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2002, pp. 176–177.
[3] N. Cho, B. Song, K. Kim, and J. Burm, S.W. Han, “A VGA CMOS Image Sensor with 11-bit Column Parallel Single-Slope ADCs,” IEEE International SoC Design Conference, 2010, pp. 25-27.
[4] M. Furuta, Y. Nishikawa, T. Inoue, and S. Kawahito, “A High-Speed, High-Sensitivity Digital CMOS Image Sensor With a Global Shutter and 12-bit Column-Parallel Cyclic A/D Converters,” IEEE Journal of Solid State Circuits, Vol. 42, no. 4, pp. 766-774, Apr. 2007.
[5] Y. Chae, J. Cheon, S. Lim, M. Kwon, K. Yoo, W. Jung, D. H. Lee, S. Ham, G. Han, “A 2.1 M Pixels, 120 Frame/s CMOS Image Sensor With Column-Parallel Δ∑ ADC Architecture,” IEEE Journal of Solid-State Circuits, Vol.46, no.1, pp. 236-247, Jan. 2011.
[6] S. Matsuo, T. J. Bales, M. Shoda, S. Osawa, K. Kawamura, A. Andersson, M. Haque, H. Honda, B. Almond, Y. Mo, J. Gleason, T. Chow, and I. Takayanagi, “8.9-Megapixel Video Image Sensor With 14-b Column-Parallel SA-ADC,” IEEE Transactions on Electron Devices, Vol. 56, no. 11, pp. 2380-2389, Nov. 2009.
[7] Z. Yang, J. Van der Spiegel, “A 10-bit 8.3MS/s Switched-current Successive Approximation ADC for Column-parallel Imagers,” IEEE International Symposium on Circuits and Systems, pp. 224-227, 2008.
[8] Y. Shu and B. Song, “A 15-bit linear 20-MS/s pipelined ADC digitally calibrated with signal-dependent dithering,” IEEE J. Solid-State Circuits, vol. 43, no. 2, pp. 342–350, Feb. 2008.
[9] M. Yoshioka, K. Ishikawa, T. Takayama, and S. Tsukamoto, “A 10 b 50 MS/s 820 W SAR ADC with on-chip digital calibration,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2010, pp. 384–385.
[10] Y. Chen, X. Zhu, H. Tamura, M. Kibune, Y. Tomita, T. Hamada, M. Yoshioka, K. Ishikawa, T. Takayama, J. Ogawa, S. Tsukamoto, and T. Kuroda, “Split capacitor DAC mismatch calibration in successive approximation ADC,” in Proc. IEEE Custom Integr. Circuits Conf., 2009, pp. 279–282.
[11] S. Jiang, M. A. Do, K. S. Yeo, and W. M. Lim, “An 8-bit 200-MSample/s pipelined ADC with mixed-mode front-end S/H circuit,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 55, no. 6, pp. 1430–1440, Jul. 2008.
[12] F. Kuttner, “A 1.2-V 10-b 20-Msample/s nonbinary successive approximation ADC in 0.13-..m CMOS,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2002, pp. 176–177.
[13] W. Liu, Y. Chang, S. K. Hsien, B. W. Chen, Y. P. Lee, W. T. Chen, T. Y. Yang, G. K. Ma, and Y. Chiu, “A 600 MS/s 30 mW 0.13um CMOS ADC array achieving over 60 dB SFDR with adaptive digital equalization,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2009, pp. 82–83.
[14] M. Waltari and K. A. I. Halonen, “1-V 9-bit pipelined switched opamp ADC,” IEEE J. Solid-State Circuits, vol. 36, no. 1, pp. 129–134, Jan. 2001.
[15] M. Yoshioka, M. Kudo, T. Mori, and S. Tsukamoto, “A 0.8 V 10 b 80 MS/s 6.5 mW pipelined ADC with regulated overdrive voltage biasing,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2007, pp. 452–453.
[16] M. Furuta, Y. Nishikawa, T. Inoue, and S. Kawahito, “A high-speed high-sensitivity digital CMOS image sensor with a global shutter and 12-bit column-parallel cyclic AD converters,” IEEE J. Solid-State Circuits, vol. 42, no. 4, pp. 766–774, Apr. 2007.
[17] C.-C. Liu et al., “A 10 b 100 MS/s 1.13 mW SAR ADC with binary- scaled error compensation,” in Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2010, pp. 386–387.
[18] M. Boulemnakher, E. Andre, J. Roux, and F. Paillardet, “A 1.2 V 4.5 mW 10 b 100 MS/s pipeline ADC in a 65 nm CMOS,” in Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2008, pp. 250–251.
[19] M. Snoeij, A. Theuwissen, K. Makinwa, and J. Huijsing, “A CMOS imager with column-level ADC using dynamic column fixed-pattern noise reduction,” IEEE J. Solid-State Circuits, vol. 41, no. 12, pp. 3007–3015, Dec. 2006.
[20] J. Craninckx and G. Van der Plas, “A 65 fJ/conversion-step 0-to-50 MS/s 0-to-0.7 mW 9 b charge-sharing SAR ADC in 90 nm digital CMOS,” in Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2007, pp. 246–247.
[21] B. Fotouhi and D. Hodges, “High-resolution A/D conversion in MOS/LSI,” IEEE J. Solid-State Circuits, vol. SSC-14, no. 6, pp. 920–926, Dec. 1979.
[22] D. Cline, “Noise, speed, and power trade-offs in pipelined analog to digital converters,” Ph.D. dissertation, UC Berkeley, Berkeley, CA, 1995.
[23] R. Walker, H. Gao, P. Nuyujukian, K. Makinwa, K. V. Shenoy, T. Meng, and B. Murmann, “A 96-channel full data rate direct neural interface in 0.13 m CMOS,” in IEEE VLSI Circuits Dig. Tech. Papers, 2011, pp. 144–145.
[24] T. Otaka, Y. Lee, T. Bales, P. Smith, J. Macdowell, S. Smith, and I. Takayanagi, “12-bit column-parallel ADC with accelerated ramp,” in Proc. IEEE Workshop CCDs, AIS, 2005, pp. 163–176.
[25] J. Yuan, H. Chan, S. W. Fung, and B. Liu, “An activity-triggered 95.3 dB DR 75.6 dB THD CMOS imaging sensor with digital calibration,” IEEE J. Solid-State Circuits, vol. 44, no. 10, pp. 2834–2843, Oct. 2009.
[26] C. C. Liu, S. J. Chang, G. Y. Huang, Y. Z. Lin, and C.M.Huang, “A 1V 11 fJ/conversion-step 10 bit 10 MS/s asynchronous SAR ADC in 0.18um CMOS,” in VLSI Circuits Dig. Tech. Papers, 2010, pp. 241–242.
[27] M. F. Snoeij, A. J. P. Theuwissen, and J. H. Huijsing, “A low-power column-parallel 12-bit ADC for CMOS imagers,” in Proc. IEEE Workshop CCDs, AIS, 2005, pp. 169–172.
[28] Ruoyu Xu,, Bing Liu,, and Jie Yuan, “Digitally Calibrated 768-kS/s 10-b Minimum-Size SAR ADC Array With Dithering,” IEEE Journal of Solid-State Circuits, Vol.47, no.9, pp. 2129 - 2140, Sept. 2012.
[29] J. J. Kang andM. P. Flynn, “A 12 b 11MS/s successive approximation ADC with two comparators in 0.13 m CMOS,” in VLSI Circuits Dig. Tech. Papers, 2009, pp. 240–241.