摘要
本論文研究利用離子化金屬電漿源系統將銅離子濺鍍於6000 Å SiO2/ n-type Si與400 Å TaN/ 5000 Å SiO2/ n-type Si與電漿狀態之間的關係。蘭摩爾探針被使用來量測電漿密度、電漿電位、電子溫度來確定電漿狀態。薄膜特性分析上；首先，使用FEG-SEM來觀察銅薄膜厚度與截面結構；其次，使用AFM量測表面粗糙度與表面結構；再者，XRD決定銅薄膜晶體結構，而薄膜織構與晶粒大小則由繞射結果來決定；GIXRD則被使用來決定銅薄膜的晶格參數；銅薄膜堆積因子可由RBS的結果計算而得；成分縱深分佈則由SIMS量測，銅元素與矽元素間的交互擴散距離可由二次離子質譜分析的結果中估計而得；最後，銅薄膜電阻率則由四點探針量測計算得到。總和傳遞能量密度被估計來解釋晶粒大小、交互擴散距離、與氮化鉭擴散障礙層的表現。從這估計中發現中性原子與離子濺射時所獲得動能，決定總和傳遞能量密度。對兩種不同基材而言，銅薄膜優選方向隨著總和傳遞能量與薄膜厚度的增加，由（111）方向轉為（200）方向。隨著總和傳遞能量密度的增加，晶粒尺度與鍍著於6000 Å SiO2/ n-type Si基材上銅、矽間的交互擴散距離都會增加。總和傳遞能量密度的增加驅使銅原子穿透氮化鉭進入矽基材，在氬氣氣壓低於7 mTorr以下，即使是在基材溫度僅只有25℃。

Abstract
This research investigated the relationship between the plasma state and the properties of Cu thin films deposited on 6000 Å SiO2/ n-type Si and 400 Å TaN/ 5000 Å SiO2/ n-type Si by ionized metal plasma system (IMP). The Langmuir probe is used to determine the plasma density, plasma potential, electron temperature for characterizing the plasma state. Field emission gun scanning electron microscopy (FEG-SEM) was used to observe the cross-sectional microstructure and determine the film thickness. The roughness and surface morphology of copper thin film was measured from the image of atomic force microscopy (AFM). The crystal structure of copper thin film was identified by X-ray diffraction (XRD). The texture and grain size were determined from the XRD results. Glancing incident X-ray diffraction (GIXRD) was used to determine the lattice parameter of copper thin films. The packing factor of the Cu films was determined by RBS. The composition depth profiles were measured by secondary ion mass spectroscopy (SIMS) and the inter-diffusion distance between Cu and Si was also estimated. The resistivity was measured by a four-point probe. The total delivered energy density was estimated to explain grain size, inter-diffusion distance, and the performance of TaN diffusion barrier. It is found that the sputtered energy of the neutrals or ions dominates the total delivered energy from the estimation. The preferred orientation changed from Cu (111) to Cu (200) with the increase of the total delivered energy density and the thickness of Cu thin films for both substrates. As the total delivered energy density increases, grain size and inter-diffusion distance between Si and Cu of Cu thin films deposited on 6000 Å SiO2/ n-type Si increases. The increase of the total energy density facilitated copper atoms to penetrate TaN diffusion barrier into Si base at Ar pressure lower than 7 mTorr even though the substrate temperature is only 25 ℃.

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