研究生: |
賴品羱 Lai, Pin-Yuan |
---|---|
論文名稱: |
利用Ar/H2 混合工作氣體之常壓電漿處理焊點製程並探討其潤濕行為分析 Analysis of Wetting behavior in solder joint process via Ar / H2 atmospheric pressure plasma treatment |
指導教授: |
陳柏宇
Chen, Po-Yu 杜正恭 Duh, Jenq-Gong |
口試委員: |
吳芳賓
Wu, Fan-Bean 賴元泰 Lai, Yuan-Tai |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 材料科學工程學系 Materials Science and Engineering |
論文出版年: | 2024 |
畢業學年度: | 113 |
語文別: | 英文 |
論文頁數: | 94 |
中文關鍵詞: | 封裝 、電漿 、表面處理 |
外文關鍵詞: | package, plasma, surface modification |
相關次數: | 點閱:80 下載:0 |
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電子封裝領域中回焊過程的氧化會嚴重影響接點的潤濕表現,從而損害電子封裝的可靠度。本研究透過常壓電漿清潔的方法取代傳統助焊劑用於去除金屬表層之氧化物以實現可靠的焊接,探討常壓電漿對銅基板及焊球的清潔效果,並觀察電漿去除氧化層後的潤濕行為。
透過掃描電子顯微鏡(SEM)的橫截面分析顯示,經過電漿前處理和後處理的樣品表現出最佳的潤濕性。電漿前處理過程促進了界面處的金屬間化合物形成,而電漿後處理則有效地去除了焊料表層的氧化層。結合前處理及後處理能使焊球和銅基板達到最低的潤濕角,顯示出優越潤濕表現。電子微探儀(EPMA)進一步證實了電漿處理後錫球和銅表面上的氧化層能被完全去除,應證了氧化對潤濕表現的影響。同時為了瞭解回焊階段的電漿清潔效率,本研究計算了電漿還原與氧化層形成速率之間的差異。透過SEM觀察的氧化層厚度變化顯示,該電漿系統中氧化層的去除速率超過了回焊溫度下氧化層的生成速率。這表明在回焊過程中進行的電漿處理仍能有效維持去除氧化層的效果。
綜觀上述內容本研究強調常壓電漿處理能去除銅基板表層的氧化層,同時抑制焊球表面氧化層在回焊過程中的生成以提升整體的潤濕表現。此外也驗證電漿在回焊過程中去除氧化層的效率。透過上述的實驗結果能更深入理解並優化電漿表面處理製程,進而開發較可靠的焊點接合。
The challenge of solder pad oxidation is crucial in electronic packaging, as it detrimentally affects solder wettability, thereby compromising solderability and overall reliability. This study is committed to achieving reliable solder joints through the plasma cleaning methodology, focusing on the effectiveness of atmospheric-pressure plasma (APP) for plasma pre-treatment and post-treatment. The APP system utilizes a mixture of Argon gas and 5% Hydrogen to minimize the presence of metallic oxides during the reflow process.
Cross-sectional analysis using Scanning Electron Microscopy (SEM) revealed that Groups subjected to plasma pre-treatment following post-treatment exhibited optimal wettability. The plasma pre-treatment process facilitated the formation of intermetallic compounds (IMCs) at the interface, while the plasma post-treatment effectively removed the solder oxide shell. This combination resulted in the lowest contact angle of 29.5° between the solder balls and copper substrates, indicating superior wetting behavior. Electron Probe Micro-Analyzer (EPMA) analysis further confirmed the absence of continuous oxide layers on the tin balls and copper surfaces after plasma treatment, supporting the wettability performance observed in the cross-sectional analysis and establishing a significant correlation between oxide layer presence and wettability.
To better understand plasma cleaning efficiency during the reflow stage, the study further investigated the differences in plasma reduction and oxide layer formation rates. SEM analysis showed that the oxide removal rate exceeded that during reflow. This suggests that plasma treatment can maintain a low oxygen level at the bonding interface, which promotes wetting and achieves an ideal balanced wetting angle.
In summary, this study emphasizes the enhancement of solder wettability through APP treatment while reducing the formation of oxide layers on copper and solder ball surfaces during reflow. It also validates the efficiency of oxide layer removal by plasma during the reflow process and examines the final wettability performance after plasma treatment. These findings significantly contribute to understanding and optimizing plasma cleaning approach for achieving reliable solder joints.
References
[1] R. K. Ulrich and W. D. Brown, Advanced electronic packaging. John Wiley & Sons, 2006.
[2] Y. B. Gianchandani, O. Tabata, and H. P. Zappe, "Comprehensive microsystems," (No Title), 2008.
[3] R. Prasad, Surface mount technology: principles and practice. Springer Science & Business Media, 2013.
[4] A. Papanikolaou, D. Soudris, and R. Radojcic, Three dimensional system integration: IC stacking process and design. Springer Science & Business Media, 2010.
[5] J. H. Lau, "Evolution and outlook of TSV and 3D IC/Si integration," in 2010 12th Electronics Packaging Technology Conference, 2010: IEEE, pp. 560-570.
[6] C.-S. Lau, M. Z. Abdullah, and F. C. Ani, "Effect of solder joint arrangements on BGA lead-free reliability during cooling stage of reflow soldering process," IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 2, no. 12, pp. 2098-2107, 2012.
[7] K. J. Puttlitz and K. A. Stalter, Handbook of lead-free solder technology for microelectronic assemblies. CRC Press, 2004.
[8] C. M. Miller, I. E. Anderson, and J. F. Smith, "A viable tin-lead solder substitute: Sn-Ag-Cu," Journal of electronic materials, vol. 23, pp. 595-601, 1994.
[9] J. R. Lloyd, C. Zhang, H. L. Tan, D. Shangguan, and A. Achari, "Measurements of thermal conductivity and specific heat of lead free solder," in Seventeenth IEEE/CPMT International Electronics Manufacturing Technology Symposium.'Manufacturing Technologies-Present and Future', 1995: IEEE, pp. 252-262.
[10] S. K. Kang, W. K. Choi, M. Yim, and D.-Y. Shih, "Studies of the mechanical and electrical properties of lead-free solder joints," Journal of Electronic Materials, vol. 31, pp. 1292-1303, 2002.
[11] K. J. P. G. T. Galyon, "Impact of the ROHS Directive on high-performance electronic systems," Lead-Free Electronic Solders: A Special Issue of the Journal of Materials Science: Materials in Electronics, vol. 11, p. 331, 2007.
[12] R. Pandher and T. Lawlor, "Effect of Silver in common lead-free alloys," in Proceedings of the International Conference on Soldering and Reliabilty, 2009, pp. 1-14.
[13] J.-W. Yoon, B.-I. Noh, B.-K. Kim, C.-C. Shur, and S.-B. Jung, "Wettability and interfacial reactions of Sn–Ag–Cu/Cu and Sn–Ag–Ni/Cu solder joints," Journal of alloys and compounds, vol. 486, no. 1-2, pp. 142-147, 2009.
[14] S.-K. Seo, M. G. Cho, S. K. Kang, J. Chang, and H. M. Lee, "Minor alloying effects of Ni or Zn on microstructure and microhardness of Pb-free solders," in 2011 IEEE 61st Electronic Components and Technology Conference (ECTC), 2011: IEEE, pp. 84-89.
[15] J. Vardaman, Surface Mount Technology: Recent Japanese Developments. Institute of Electrical & Electronics Engineers (IEEE), 1993.
[16] J. H. Lau, Flip chip technologies. McGraw-Hill Professional, 1996.
[17] S. Fürtauer, D. Li, D. Cupid, and H. Flandorfer, "The Cu–Sn phase diagram, Part I: new experimental results," Intermetallics, vol. 34, pp. 142-147, 2013.
[18] X. Deng, G. Piotrowski, J. Williams, and N. Chawla, "Influence of initial morphology and thickness of Cu 6 Sn 5 and Cu 3 Sn intermetallics on growth and evolution during thermal aging of Sn-Ag solder/Cu joints," Journal of Electronic Materials, vol. 32, pp. 1403-1413, 2003.
[19] W.-m. Tang, A.-Q. He, L. Qi, and D. Ivey, "Solid state interfacial reactions in electrodeposited Cu/Sn couples," Transactions of nonferrous metals society of China, vol. 20, no. 1, pp. 90-96, 2010.
[20] A. Yabuki and N. Arriffin, "Electrical conductivity of copper nanoparticle thin films annealed at low temperature," Thin Solid Films, vol. 518, no. 23, pp. 7033-7037, 2010.
[21] L. Lu, Y. Shen, X. Chen, L. Qian, and K. Lu, "Ultrahigh strength and high electrical conductivity in copper," Science, vol. 304, no. 5669, pp. 422-426, 2004.
[22] P. Nath and K. Chopra, "Thermal conductivity of copper films," Thin Solid Films, vol. 20, no. 1, pp. 53-62, 1974.
[23] C. T. Chong, A. Leslie, L. T. Beng, and C. Lee, "Investigation on the effect of copper leadframe oxidation on package delamination," in 1995 Proceedings. 45th Electronic Components and Technology Conference, 1995: IEEE, pp. 463-469.
[24] J. Fan, C. Tan, and Y. Pardhi, "Metallurgy—Advances in Materials and Processes," InTech, Rijeka, 2012.
[25] Y.-H. Wang, M. R. Howlader, K. Nishida, T. Kimura, and T. Suga, "Study on Sn–Ag oxidation and feasibility of room temperature bonding of Sn–Ag–Cu solder," Materials Transactions, vol. 46, no. 11, pp. 2431-2436, 2005.
[26] C. K. Chung, Y. Chen, C. Li, and C. Kao, "The critical oxide thickness for Pb-free reflow soldering on Cu substrate," Thin Solid Films, vol. 520, no. 16, pp. 5346-5352, 2012.
[27] M. Ramirez, L. Henneken, and S. Virtanen, "Oxidation kinetics of thin copper films and wetting behaviour of copper and Organic Solderability Preservatives (OSP) with lead-free solder," Applied Surface Science, vol. 257, no. 15, pp. 6481-6488, 2011.
[28] N. Razali, G. Omar, S. R. Esa, S. Jasmee, and A. A. Kamarolzaman, "Effect of Annealing Temperature on the Surface Properties of Copper‐Based Leadframe," Journal of Advanced Research in Fluid Mechanics and Thermal Sciences, vol. 52, no. 2, pp. 266-273, 2018.
[29] W. D. van Driel, M. A. van Gils, X. Fan, G. Zhang, and L. J. Ernst, "Driving mechanisms of delamination related reliability problems in exposed pad packages," IEEE Transactions on Components and Packaging Technologies, vol. 31, no. 2, pp. 260-268, 2008.
[30] M. S. Jellesen, D. Minzari, U. Rathinavelu, P. Møller, and R. Ambat, "Corrosion failure due to flux residues in an electronic add-on device," Engineering Failure Analysis, vol. 17, no. 6, pp. 1263-1272, 2010.
[31] S. Zhan, M. H. Azarian, and M. Pecht, "Reliability of printed circuit boards processed using no-clean flux technology in temperature–humidity–bias conditions," IEEE Transactions on Device and Materials Reliability, vol. 8, no. 2, pp. 426-434, 2008.
[32] J. R. White, "Conduction mechanisms in contaminant layers on printed circuit boards," IBM Journal of Research and Development, vol. 37, no. 2, pp. 243-248, 1993.
[33] B. A. Smith and L. J. Turbini, "Characterizing the weak organic acids used in low solids fluxes," Journal of Electronic Materials, vol. 28, pp. 1299-1306, 1999.
[34] C. J. TAUTSCHER, "CONTAMINATION EFFECTS OH ELECTRONIC PRODUCTS," ed, 1993.
[35] K. Hansen, M. Jellesen, P. Moller, P. Westermann, and R. Ambat, "Reliability and maintainability symposium," in RAMS Proceedings, 2009.
[36] M. Gershovich, "Micron-level measurement of a soldering for optoelectronic assembly process," University of Colorado, 1994.
[37] L. Brunton, R. Hilal-Dandan, and B. Knollmann, "McGraw-Hill Education: New York," NY, USA, 2017.
[38] S. Ramos, P. Cisquini, R. Nascimento Jr, A. Franco Jr, and E. Vieira, "Morphological changes and kinetic assessment of Cu2O powder reduction by non-thermal hydrogen plasma," Journal of Materials Research and Technology, vol. 11, pp. 328-341, 2021.
[39] S. Poulston, P. Parlett, P. Stone, and M. Bowker, "Surface oxidation and reduction of CuO and Cu2O studied using XPS and XAES," Surface and Interface Analysis: An International Journal devoted to the development and application of techniques for the analysis of surfaces, interfaces and thin films, vol. 24, no. 12, pp. 811-820, 1996.
[40] C. C. Dong, A. Schwarz, and D. V. Roth, "Feasibility of fluxless reflow of lead-free solders in hydrogen and forming gas," Nepcon Malaysia, vol. 97, pp. 03-32, 1997.
[41] U. JPJ and S. Hong, "Fluxless soldering," Microjoining and Nanojoining, p. 327, 2008.
[42] S. Nangalia et al., "Fluxless, no clean assembly of optoelectronic devices with PADS," in 1997 Proceedings 47th Electronic Components and Technology Conference, 1997: IEEE, pp. 755-762.
[43] S. Nangalia, P. Deane, S. Bonfede, A. Huffman, C. Statler, and C. L. Rinne, "Issues with fine pitch bumping and assembly," in Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (Cat. No. 00TH8507), 2000: IEEE, pp. 118-123.
[44] K. C. Sabat, P. Rajput, R. Paramguru, B. Bhoi, and B. Mishra, "Reduction of oxide minerals by hydrogen plasma: an overview," Plasma Chemistry and Plasma Processing, vol. 34, pp. 1-23, 2014.
[45] A. Rouine, "HSC thermodynamic database," Outokumpu Research Centre, Pori, 1989.
[46] A. Bergh, "Atomic hydrogen as a reducing agent," The Bell System Technical Journal, vol. 44, no. 2, pp. 261-271, 1965.
[47] S.-M. Hong, C.-S. Kang, and J.-P. Jung, "Flux-free direct chip attachment of solder-bump flip chip by Ar+ H 2 plasma treatment," Journal of electronic materials, vol. 31, pp. 1104-1111, 2002.
[48] D. L. Flamm and D. M. Manos, Plasma etching: an introduction. Academic Press, 1989.
[49] Y. Lin, W. Lin, and L. Chiu, "Enhanced solder wettability of oxidized‐copper with lead‐free solder via Ar‐H2 plasmas for flip‐chip bumping: the effects of H2 flow rates," Soldering & surface mount technology, vol. 24, no. 3, pp. 183-190, 2012.
[50] J. Wang, Q. Wang, D. Wang, and J. Cai, "Study on Ar (5% H2) plasma pretreatment for Cu/Sn/Cu solid-state-diffusion bonding in 3D interconnection," in 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), 2016: IEEE, pp. 1765-1771.
[51] M. Yamamoto, E. Higurashi, T. Suga, R. Sawada, and T. Itoh, "Properties of various plasma surface treatments for low-temperature Au–Au bonding," Japanese journal of applied physics, vol. 57, no. 4S, p. 04FC12, 2018.
[52] T. Desmet, R. Morent, N. De Geyter, C. Leys, E. Schacht, and P. Dubruel, "Nonthermal plasma technology as a versatile strategy for polymeric biomaterials surface modification: a review," Biomacromolecules, vol. 10, no. 9, pp. 2351-2378, 2009.
[53] R. Franklin and N. S. J. Braithwaite, "Electron plasma waves and plasma resonances," Plasma Sources Science and Technology, vol. 18, no. 1, p. 014019, 2008.
[54] A. Schutze, J. Y. Jeong, S. E. Babayan, J. Park, G. S. Selwyn, and R. F. Hicks, "The atmospheric-pressure plasma jet: a review and comparison to other plasma sources," IEEE transactions on plasma science, vol. 26, no. 6, pp. 1685-1694, 1998.
[55] C. Tendero, C. Tixier, P. Tristant, J. Desmaison, and P. Leprince, "Atmospheric pressure plasmas: A review," Spectrochimica Acta Part B: Atomic Spectroscopy, vol. 61, no. 1, pp. 2-30, 2006.
[56] T. Fujimoto and R. McWhirter, "Validity criteria for local thermodynamic equilibrium in plasma spectroscopy," Physical Review A, vol. 42, no. 11, p. 6588, 1990.
[57] H. Yu et al., "Atmospheric and Vacuum Plasma Treatments of Polymer Surfaces for Enhanced Adhesion in Microelectronics Packaging," Adhesion in Microelectronics, pp. 137-172, 2014.
[58] R. A. Wolf, Atmospheric pressure plasma for surface modification. John Wiley & Sons, 2012.
[59] G. Park et al., "Atmospheric-pressure plasma sources for biomedical applications," Plasma Sources Science and Technology, vol. 21, no. 4, p. 043001, 2012.
[60] D. Mariotti and R. M. Sankaran, "Perspectives on atmospheric-pressure plasmas for nanofabrication," Journal of Physics D: Applied Physics, vol. 44, no. 17, p. 174023, 2011.
[61] P. Rajput, B. Bhoi, S. Sahoo, R. Paramguru, and B. Mishra, "Preliminary investigation into direct reduction of iron in low temperature hydrogen plasma," Ironmaking & Steelmaking, vol. 40, no. 1, pp. 61-68, 2013.
[62] F. Yost and A. Romig, "Thermodynamics of wetting by liquid metals," MRS Online Proceedings Library (OPL), vol. 108, p. 385, 1987.
[63] F. Rezaei et al., "Investigation of plasma‐induced chemistry in organic solutions for enhanced electrospun PLA nanofibers," Plasma Processes and Polymers, vol. 15, no. 6, 2018, doi: 10.1002/ppap.201700226.
[64] A. Vesel, J. Kovac, G. Primc, I. Junkar, and M. Mozetic, "Effect of H(2)S Plasma Treatment on the Surface Modification of a Polyethylene Terephthalate Surface," Materials (Basel), vol. 9, no. 2, Feb 5 2016, doi: 10.3390/ma9020095.
[65] A. Bogaerts and R. Gijbels, "Effects of adding hydrogen to an argon glow discharge: overview of relevant processes and some qualitative explanations," Journal of Analytical Atomic Spectrometry, vol. 15, no. 4, pp. 441-449, 2000.
[66] A. Amri et al., "Surface structural features and optical analysis of nanostructured Cu-oxide thin film coatings coated via the sol-gel dip coating method," Ceramics International, vol. 45, no. 10, pp. 12888-12894, 2019.
[67] T. Hetschel, K.-J. Wolter, and F. Phillipp, "Wettability effects of immersion tin final finishes with lead free solder," in 2008 2nd Electronics System-Integration Technology Conference, 2008: IEEE, pp. 561-566.
[68] J. Sun et al., "A review on phase field modeling for formation of η-Cu6Sn5 intermetallic," Metals, vol. 12, no. 12, p. 2043, 2022.
[69] K. Sabat, R. Paramguru, and B. Mishra, "Reduction of copper oxide by low-temperature hydrogen plasma," Plasma Chemistry and Plasma Processing, vol. 36, pp. 1111-1124, 2016.
[70] D. Zhu, P. Dai, X. Luo, and Y. Zhang, "Novel characterization of wetting properties and the calculation of liquid-solid interface tension (I)," Sci. Technol. Eng, vol. 7, no. 13, pp. 3057-3062, 2007.
[71] L. Zang, Z. Yuan, H. Xu, and B. Xu, "Wetting process and interfacial characteristic of Sn–3.0 Ag–0.5 Cu on different substrates at temperatures ranging from 503 K to 673 K," Applied Surface Science, vol. 257, no. 11, pp. 4877-4884, 2011.