2,3,5,6-四氟-7,7’,8,8’-四氰二甲基對苯醌在 Ni/Cu(100)表面上之自旋介面性質與磁有序性研究

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研究生：	陳柏宏 Chen, Po-Hung
論文名稱：	2,3,5,6-四氟-7,7’,8,8’-四氰二甲基對苯醌在 Ni/Cu(100)表面上之自旋介面性質與磁有序性研究 Enhanced Magnetic Ordering and Spinterface of F4-TCNQ on Ni/Cu(100) Surface
指導教授：	許瑤真 Hsu, Yao-Jane 王本誠 Wang, Pen-Cheng
口試委員:	許瑤真 Hsu, Yao-Jane 王本誠 Wang, Pen-Cheng 魏德新 Wei, Der-Hsin 林宏基 Lin, Hong-Ji
學位類別：	碩士 Master
系所名稱：	理學院 - 先進光源科技學位學程 Degree Program of Science and Technology of Synchrotron Light Source
論文出版年：	2014
畢業學年度：	102
語文別：	中文
論文頁數：	96
中文關鍵詞：	有機自旋閥、鎳、光電子發射顯微術、磁光柯爾效應儀、磁圓偏振二向性、顯像式光電子顯微術
外文關鍵詞：	organic spin valve, ultra-violet photoelectron spectroscopy, X-ray Magnetic Circular Dichroism, Photoemission electron microscopy, F4-TCNQ
相關次數：	點閱：2 下載：0
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本論文主要探討在不同製備參數(Ni厚度)下，有機自旋閥底層結構中之有機半導體薄膜(2,3,5,6-Tetrafluoro-7,7’,8,8’-Tetracyanoquinodimethane，簡稱F4-TCNQ)蒸鍍於鐵磁性鎳(Nickel, Ni)薄膜的自旋介面特性。利用表面磁光科爾效應MOKE、圓偏振光二色性XMCD、顯像式光電子能譜顯微術PEEM等磁性量測工具來分析F4-TCNQ/Ni自旋介面的磁耦合現象、磁結構元素分析和磁區分佈，並且使用光電子能譜顯微術XPS觀察F4-TCNQ和Ni之間電荷轉移的類型、元素鍵結及薄膜成長機制，同時透過紫外光光電子能譜UPS得知功函數變化，進而得知此自旋介面的能帶接面情形。

We investigated the magnetic properties and spin interface of tetrafluorotetracyanoquinodimethane (F4-TCNQ)-tailored nickel (Cu(100)/Ni) surface which display enhanced magnetic ordering at lower critical thickness of Ni film. Surface magnetic anisotropy performed by the magneto-optical Kerr effect (MOKE) displays magnetic hardening upon F4-TCNQ adsorption. The magnetic domains inspected by photoelectron-emission microscope (PEEM) measurements also exhibits improved magnetic ordering with larger domain sizes and less domain boundary. To elucidate the origin of enhanced magnetic ordering after molecular tailoring, surface-sensitive and element specific X-ray Magnetic Circular Dichroism (XMCD) were employed. The XMCD reveals the orbital and spin moment of in-plane Ni is significantly increased, while that keep almost unaltered at out-of-plane. Through the strong superexchange coupling at in-plane, the nonmagnetic F4-TCNQ is spin polarized. Our results suggest the enhanced magnetic ordering of such organic-ferromagnetic interface is an effective spin filtering for constructing high efficient organic spintronics.

第一章    序論……………………………………………………………1
1    前言………………………………………………………………………1
第二章    理論背景與文獻回顧……….……………….…………...2
1    有機自旋閥………………………………………………….…………...2
1.1    磁阻效應(巨磁阻、穿隧磁阻)………………………………...2
1.2    有機自旋閥之發展……………………………………………..3
1.3    有機自旋閥之介面……………………..………………………4
2    磁性基礎理論…………..………………………..………………………5
2.1    鐵磁性材料……………………………..………………………5
2.2    自旋翻轉成因……………………..……………………………6 
3    有機半導體簡介……………………..………………..…………………7
3.1    有機自旋電子學……………………………..…………………7
3.2    有機分子F4-TCNQ…………..………………..………………7
5    研究動機…………..………………..………………………………….…7
第三章    儀器設備與實驗原理…….………………………………15
1    同步輻射光源(Synchrotron Radiation)…………………………………15
2    光電子發射顯微術(Photoemission Spectroscopy)……………………...15
2.1  Ｘ光光電子發射能譜術（X-ray Photoelectron Spectroscopy）.16
2.2  紫外光光電電子能譜 (Ultra-violet Photoelectron Spectroscopy)…………………………………………………………………16
3     磁光柯爾效應儀(Magneto-Optical Kerr Effect)……………………….17
4     磁圓偏振二向性（X-ray Magnetic Circular Dichroism）…………….18
5    顯像式光電子顯微術 (Photoemission electron microscopy)…… .……18
第四章    實驗方法與樣品量測……………………………………26
1    實驗方法…………………………………………………………………26
1.1    實驗樣品………………………………….……………………26
1.2    基板清潔………………………………….……………………26
1.3   樣品製備………………………………….……………………27
2    樣品量測…………………………………………...……………………27
2.1    XPS、UPS的量測……………………...…..…………………27
2.2    MOKE的量測…………………………...…..…………………28
2.3    XMCD的量測及數據處理……………...…..…………………28
2.4    PEEM的量測及數據處理……………...…..…………………30
第五章    實驗結果與討論……………...…..………………….……37
1        Ni/Cu(100)的自旋翻轉臨界厚度...…..…….……..………….…….37
2.1    各樣品其鐵磁層Ni厚度可靠性比較...…..…….……..…….…….47
2.2    鐵磁層Ni的磁結構(magnetic structure)分析…....………….…….47
2.3    F4-TCNQ各元素的磁性表徵分析.……..…………………...…….50
2.4    F4-TCNQ/ Ni的磁性模型……..………………………...…...…….51
3.1    XMCD數據比較 (dichroic ratio)……………………………….….61
3.2    F4-TCNQ吸附前後之Ni磁區影像比較………………………….61
3.3   元素N之磁影像…………………………………………………….63
4.1   Ni 2p3/2核層電子能譜…………………………………….……….69
4.2   F 1s核層電子能譜………………………………………….……….70
4.3   N 1s核層電子能譜………………………………...……….……….71
第六章    結論………………………………...……….………………...84
第七章    參考文獻………………………………...……….………….85
附錄………………………………………………………...……….……….92

                                

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