摘要
在之前我們已經由模擬得到了效率為17.04%的SPA結構，SPA結構內有非參雜以及參雜過的非晶、微晶與多晶矽薄膜，本組全體同仁致力於研究各層的參數，希望以最快的時間內分工合作，得到高效率的SPA結構。
SPA結構擁有一層相當薄的P參雜非晶矽window layer，除了研究其他層薄膜，本篇論文即把重點放在10nm左右的 window layer上，而我們也使用HDP-CVD加上hydrogen treatment and annealing進行研究較高晶粒大小的薄膜，在分析方面，我會使用穿隧式電子顯微鏡、霍爾量測、拉曼量測、N&K量測、X光繞射量測、四點探針量測等，去分析每個參數下的成果以及影響。
善加利用hygergent passivation treatment 以及annealing這些方法後(機台功率密度最大為0.653W/cm2)，結晶率方面我們達到了83%，較大的晶粒大小也至300-400nm左右，濃度方面，微晶矽p type達到1018cm-3;微晶矽n type達到1019cm-3; 非晶矽 P type達到1018cm-3;非晶矽 n type達到1019cm-3左右，接著我們積極的嘗試做出一些HIT
太陽電池，後面也有一些比較以及討論，讓我們對未來也有一些方向。

Abstract
Fabrication of SPA solar cell structure which have been developed by our group using simulation studies requires device quality doped as well as undoped polycrystalline silicon and amorphous silicon thin films.
The window layer of the SPA solar cell structure consists of a thin layer of about 10 nm p type doped amorphous silicon. The characterization of the window layer by ICPCVD and fabrication of the thin film solar cell are the main focus of this thesis. Also we fabricated poly-Si thin films of higher crystallinity and higher grain size by ICPCVD using hydrogen treatment and annealing method. Characteristics of the deposited Si films are analyzed by SEM, Hall measurement, Raman measurement, N&K, XRD and four probe. Poly-Si thin films with bigger grain size (about 300nm-500nm), is achieved by using hydrogen treatment and annealing method.
Crystalline volume fractions of these films are about 83.1%. A power density of 0.653W/cm2 is used and the growth rate of these columnar poly-Si thin film was 3.04 nm/s, with a three layered deposition process and subsequent H treatment and annealing.
In the case of doped layers, a carrier concentration of about 1018 cm-3 for P type μc-silicon; 1019 cm-3 for N type μc-silicon; and about 1018 cm-3 for P type a-Si; 1019cm-3 for N type a-Si and 0.11% HIT solar cell efficiency are achieved.

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