本研究目的為合成摻雜銻之二氧化錫一維奈米結構並分析其陰極發光特性。實驗中利用熱蒸鍍法分別在氧化鋁基板上合成純二氧化錫奈米線及摻雜銻之二氧化錫奈米線作為相互對照。已合成的純二氧化錫一維奈米結構有：長鳥嘴狀二氧化錫奈米線、短鳥嘴狀二氧化錫奈米線；摻雜銻之二氧化錫奈米結構包含：摻雜銻之二氧化錫奈米線、摻雜銻之針狀鳥嘴二氧化錫奈米柱、摻雜銻之二氧化錫奈米帶。上述的結構先以場發射掃瞄式電子顯微鏡(FESEM)觀察形貌，再利用穿透式電子顯微鏡(TEM)和XRD分析結構及成長方向，最後使用XPS或EDS作成分的鑑定。
在陰極發光特性分析的部分，研究結果顯示摻雜銻之二氧化錫奈米結構的陰極發光光譜在480 nm附近皆有微弱的發光訊號，而純二氧化錫奈米結構則在480 nm及600nm左右有非常強的陰極發光訊號。此位在600 nm附近的峰值，我們相信是由成長過程所產生的氧空缺所提供。

In this work, pure SnO2 nanowires and Sb-doped SnO2 1-D nanostructures have been synthesized by thermal evaporation. Some of the nanostructures grown on Al2O3 substrates showed beak-like structures at tips. The pure SnO2 nanostructures were successfully synthesized and had appearance of long beak-like nanowires and short beak-like nanowires. We fabricated Sb-doped SnO2 nanowires, Sb-doped SnO2 with needle-like beak nanorods and Sb-doped SnO2 nanobelts with thermal evaporation by using pure tin (Sn) and antimony (Sb) powders under oxygen atmosphere. The morphology of nanostructures was analyzed by field emission scanning electron microscope (FESEM). The d-spacing and grown directions of nanowires were identified by high resolution transmission electron microscopy and selected-area electron diffraction analysis (HRTEM & SAD). The structures and components were characterized by means of X-ray diffraction, energy dispersive x-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS).
Furthermore, we have also studied about the Cathodoluminescence (CL) property of the pure SnO2 and the Sb-doped SnO2 1-D nanostructures. The CL spectra of Sb-doped SnO2 nanowires showed only one peak centered at 480 nm, while the CL spectra of the pure SnO2 nanowires showed two broad bands centered at 480 nm and 600 nm with very strong intensity. We believed the emission peak at 600 nm was contributed by oxygen vacancy which was generated with the growth of nanowires.

第七章參考文獻

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