本研究主要是使用熱化學氣相沉積系統合成出低維度氧氮化物奈米晶體,並在奈米晶體中摻雜不同元素,如:鎵、鈦、氮等原子，成功合成出四種在光電特性上獨特之奈米結構材料。製程內容涵蓋:兩階段共蒸鍍法合成出之摻雜鎵氧化鋅奈米線(Ga-doped ZnO); 利用金屬蒸氣真空電弧系統(MEVVA)植入鈦之氧化鋅奈米線(Ti-doped ZnO); 並藉由微波電漿增強化學氣相沉積系統(MPECVD)所產生之氮電漿和氮氣混入法進行摻雜氮之氧化鎵奈米線(N-doped ß-Ga2O3)，以及控制氨氣(NH3)開關頻率(十分鐘/次)所合成出之鋸齒型氧氮化鎵奈米線(Zigzag Ga2O3/GaN)。接著進一步探討其摻雜前後微結構變化、電性的提升和光學性質的調變。最後研究奈米晶體在元件上的特性，研究其未來在產業應用上的優勢。
研究結果顯示，利用兩階段共蒸鍍法合成出摻雜鎵之氧化鋅奈米線有著很高密度和陣列的型態，可運用於電子場發射特性，並分別測得其起始電場在3.4 V/μm時可得到電流密度為10 μA/cm2、臨界值在5.4 V/μm可得到1 mA/cm2及場效應增強係數β值高達5945。接著進一步討論經由MEVVA系統所植入摻雜鈦之氧化鋅奈米線對光電特性的提升，由實驗結果發現隨著摻雜鈦含量的提升，陰極發光光譜上有著一藍位移的現象發生。並藉由Burstein-Moss 效應的驗證可得知能帶會隨著電子載流密度的提升而增加。此外利用在FE-SEM環境下之四點探針系統去探討單一根摻雜鈦之氧化鋅奈米線的電性傳輸特性，其電阻和電阻率隨鈦含量增多而降低。而另一發現則是經由兩電極彎曲奈米線實驗可得到其具有壓電特性。而進一步配合金屬-半導體-金屬(M-S-M)理論模型計算出其電子濃度為2.7 × 1018 cm-3、電阻率為84.1 Ω cm及電子遷移率為2.75 × 10-2 cm2V-1s-1。
本研究中另一研究重點則是探討經由氮電漿處理、氮氣混入法及控制NH3開關頻率的技術能有效摻雜氮原子進入氧化鎵奈米線中，以達到不同成分濃度的摻雜及結構的改變，來觀察低溫陰極發光光譜上的調變並討論其發光機制。研究結果發現當氮原子摻雜量提升的時候，可發現氧空缺的產生會造成能帶在光譜上的偏移，因此影響激發光的變化，進而達到大幅度調變激發光的特性。最後則是設計圖樣讓奈米線運用於元件上，成功合成出p-n 奈米線連接器及一氧化氮氣體感測器，以利低維度奈米氮氧化合物奈米晶體成為未來半導體產業上的開發與應用。

Low dimensional oxide/nitride nanocrystals were synthesized by thermal chemical vapor deposition, e.g. gallium, titanium, nitrogen atoms doped into the nanocrystals in this study. Four particular optoelectronic nanomaterials were studied, they are: Ga-doped ZnO nanowires fabricated by two-step co-evaporation methods; ZnO nanowires implanted with Ti ions by using a vapor vacuum arc (MEVVA) ion implanter; N-doped β-Ga2O3 nanowires synthesized via nitrogen plasma and nitrogen mixed method, and zigzag Ga2O3/GaN fabricated by controlling a switch (on/off = 10 min per each) of ammonia (NH3) gas process. Transformation of microstructure before and after doping, promoting electronic property, and modulation of optical property were then investigated.
The self-aligned high density Ga-doped ZnO nanowires can be applied in electron field emission properties by using a two-step co-evaporation method to obtain a turn-on field of 3.4 V/um at a current density of 10 μA/cm2, a threshold field of 5.4 V/um at a current density of 1 mA/cm2, and a field-enhancement factor β of 5945 which is far better than the metallic emitter. The optoelectronic performance from the Ti-doped ZnO nanowires showed that the cathodoluminescence (CL) spectra display a blue-shift in the spectrum with increasing the dopant (Ti) concentration. Furthermore, the energy of the bandgap increases with the electron carrier density increase via the effect of Burstein-Moss. In addition, the electrical transport properties of a single Ti-doped ZnO nanowire were evaluated in a four-probe FE-SEM system and found that the resistivity decreases with increasing Ti content. More importantly the conductance of the Ti-doped ZnO nanowires was made to be dropped significantly with the increasing of mechanical bending, that is to exhibit a piezoelectronic character. The relevant electron concentration, resistivity, and electron mobility of a single Ti-doped ZnO nanowire are respectively 2.7 × 10 18 cm-3, 84.1 Ω cm, and 2.75 × 10-2 cm2V-1s-1 with the M-S-M model.
The β-Ga2O3 nanowires can be doped with nitrogen atoms effectively by nitrogen plasma treatment and controlling a switch of (NH3) gas process to observe the modulation of light emission via CL measurement at low temperature. The defects like vacancies could result in a shift of the bandgap at the CL spectra with increasing the nitrogen dopant, thereby affecting the variation of the modulation of the excitation characteristics significantly. Finally, the design pattern for nanowires in the devices have been successfully fabricated, for instance, the p-n nanowire junctions and nitric oxide gas sensors to accommodate the low dimensional oxide/nitride nanocrystals on the development and application of semiconductor industry in the future.

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