發光二極體(Light-Emitting Diode, LED)因本身具有高壽命、省電及低污染等特性，未來將逐漸取代傳統白熾燈泡成為新一世代的照明光源。在照明產品高亮度的市場要求下，高瓦數的發光二極體封裝形式已成為一種趨勢，但伴隨而來的是晶片處高熱能密度集中，此現象將導致接面溫度(Junction Temperature)上升，影響發光二極體亮度的消減、色溫改變及使用壽命縮減，故本研究根據熱傳遞基本理論、半導體電性與參數設計概念，使用有限單元分析軟體ANSYS®並搭配實際實驗，針對高功率發光二極體封裝結構與燈具模組結構進行散熱特性分析。
本研究為瞭解結構內詳細熱分佈物理行為，針對發光二極體封裝結構與燈具模組建立有限單元模型，搭配William與van de Pol等人提出熱自然對流理論代入邊界條件進行模擬分析。此外，接面溫度為影響晶片發光效率最甚之因素，故於本研究中亦基於半導體電性，使用順向偏壓法與電壓電流內差法進行接面溫度間接量測，以驗證模擬結果之正確性，其結果顯示誤差量皆在10%以內，表示分析結果與實際物理行為互相吻合。
另外，為提升發光二極體燈具之亮度與使用壽命，針對封裝體內、外部燈具與散熱鰭片幾何結構進行參數化分析，探討增加結構散熱能力之設計指標。由研究中發現對發光二極體內部封裝結構而言，因晶片本身尺寸較小，造成高熱量密度集中現象，無法有效藉封裝體內結構散逸出晶片處之熱能，故需著重外部散熱鰭片與燈具散熱結構之設計。分析結果指出增加散熱鰭片數目、燈具開孔半徑與置入導熱柱皆可有效增加結構散熱表面積、降低接面溫度進而增加亮度輸出。

[1]U. Zehnder, A Weimar, U. Strauss, M. Fehrer, B. Hahn, H. J. Lugauer, and V. Harle, “Industrial Production of GaN and InGaN Light Emitting Diodes on SiC Substrates,” Journal of Crystal Growth, Volume 230, No. 3-4, pp.497-502, 2001
[2]T. Egawa, T. Jimbo, and M. Umeno, “Characteristics of InGaN/AlGaN Light Emitting Diodes on Sapphire Substrates,” Journal of Applied Physics, Volume 82, NO. 11, pp. 5816-5821, 1997
[3]S. Strite and H. Morkoc, “GaN, AlN and InN: a review,” Journal of Vacuum Science and Tachnology, Volume B-10, No. 4, pp. 1237, 1992
[4]C. N. Han, T. L. Chou, C. F. Huang, and K. N. Chiang, “Sapphire-removed Induced the Deformation of High Power InGaN Light Emitting Diodes,” EuroSimE2008, Freiburg im Breisgau, Germany, April 20-23, 2008
[5]E. M. S. Jnr, F. L. M. Antunes and A. J. Perin, “Junction Temperature Estimation for High Power Light-Emitting Diodes,” International Symposium on Industrial Electronics, Vigo, Spain, June 4-7, 2007
[6]M. Sizong, L. Junhui, D. Ji-an and D. Guiling, “Bump Thermal Management Analysis of LED with Flipchip Package,” International Conference on Electronic Packaging Technology, Shanghai, China, August 26-29, 2006
[7]M. Arik, C. Becker, S. Weaver and J. Petroski, “Thermal Management of LED: Package to System,” Third International Conference on Solid State Lighting, San Diego, CA, USA, August 5-7, 2003
[8]S. Buso, G. Spiazzi, M. Meneghini and G. Meneghesso, “Performance Degradation of High Brightness Light Emitting Diodes under DC and Pulsed Bias, ”IEEE Transactions on Device and Materials Reliability, Volume 8, No. 2, pp.312-22, June 2008
[9]N. Holonyak, “John Bardeen and the Point-Contact Transistor,” Physics Today, Volume 45, No. 4, pp.36-43, April 1992
[10]S. Nakamura, T. Mukai and M. Senoh, “High-Power GaN P-N Junction Blue-Light-Emitting Diodes,” Japanese Journal of Apply Physics, Volume 30, No. 12A, pp. 1998-2001, December 1991
[11]S. Nakamura and T. Mukai, “High-Quality InGaN Films Grown on GaN Films,” Japanese Journal of Apply Physics, Volume 31, No. 10B, pp. 1457-1459, October 1992
[12]S. Nakamura, M. Senoh and T. Mukai, “P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes,” Japanese Journal of Apply Physics, Volume 32, No. 1A/B, pp.8-11, January 1993
[13]S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama, “High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structure,” Japanese Journal of Apply Physics, Volume 34, No. 7A, July 1995
[14]M. D. Samber, T. V. D. Ackerveken, M. Burghoorn, N. Bruinsma, and E. V. Grunsven, “A New Embedded Packaging Technology for High Power LED,” 10th Electronics Packaging Technology Conference, Singapore, December 9-12, 2008
[15]R. Mueller-Mach, G. O. Mueller, M. R. Krames and T. Trottier, “High-Power Phosphor-Converted Light-Emitting Diodes Based on Ⅲ-Nitrides,” IEEE Journal of Selected Topics in Quantum Electronics, Volume 8, No. 2, pp. 339-45, March-April 2002
[16]M. Meneghini, L. Trevisanello, C. Sanna, G. Mura, M. Vanzi, G. Meneghesso and E. Zanoni, “High Temperature Electro-Optical Degration of InGaN/GaN HBLED,” Microelectronics Reliability, Volume 47, No. 9-11, pp. 1625-1629, September-November 2007
[17]Y. C. Hsu, C. C. Tsai, M. H. Chen, Y. T. Lo, C. W. Lee and W. H. Cheng, “Decay Mechanisms of Lumen and Chromaticity for High-Power Phosphor-Based White-Light-Emitting Diodes in Thermal Aging,” Light-Emitting Diodes: Research, Manufacturing, and Applications XII, San Jose, CA, United States, January 22, 2008
[18]B. Fan, H. Wu, Y. Zhao, Y. Xian and G. Wang, “Study of Phosphor Thermal-Isolated Packaging Technologies for High-Power White Light-Emitting Diodes,” IEEE Photonics Technology Letters, Volume 19, No. 15, pp. 1121-3, August 2007
[19]M. Meneghini, L. R. Trevisanello, G. Meneghesso and E. Zanoni, “A Review on the Reliability of GaN-Based LED,” IEEE Transaction on Device and Materials Reliability, Volume 8, No. 2, June 2008
[20]N. Narendran, Y. Gu, J. P. Freyssinier, H. Yu, and L. Deng, “Solid-state Lighting: Failure Analysis of White LED,” Journal of Crystal Growth, Volume 268, No. 3-4, pp. 449-56, August 2004
[21]G. Meneghesso, S. Levada, E. Zanoni, G. Scamarcio, G. Mura, S. Podda, M. Vanzi, S. Du, and I. Eliashevich, “Reliability of Visible GaN LED in Plastic Package,” Microelectronics Reliability, Volume 43, No. 9-11, pp. 1737-42, 2003
[22]JEDEC Standard EIA/JESD51-1, “Integrated Circuits Thermal Measurement Method-Electrical Test Method (Single Semiconductor Device),” 1995
[23]S. W. Park, J. M. Kim, H. G. Baik, S. H. Kim, J. K. Hong, and H. S. Chun, “Thermal and Electrical Performance for Wafer Level Package,” Electronic Components and Technology Conference, Las Vegas, NV, USA, May 21-24, 2000
[24]J. C. Lin and K. N. Chiang, “Thermal/Mechanical Analysis of Novel C-TSOP Using Nonlinear FEM Method,” Journal of the Chinese Institute of Engineers, Volume 24, No. 4, pp.453-462, 2001
[25]K. M. Chen, K. H. Houng, and K. N.Chiang, “Thermal resistance analysis and validation of flip chip PBGA packages,” Microelectronics Reliability, Volume 46, No. 2-4, pp. 440-448, February-April, 2006
[26]C. Y. Chou, C. J. Wu, H. P. Wei, M. C. Yew, C.C. Chiu and K. N. Chiang, “Thermal management on hot spot elimination / junction temperature reduction for high power density system in package structure,” International Electronic Packaging Technical Conference and Exhibition, Vancouver, Canada, July 8-12, 2007
[27]J. P. You, Y. He and F. G. Shi, “Thermal Management of High Power LED: Impact of Die Attach Materials,” International Microsystems, Packaging, Assembly and Circuits Technology Conference, Taipei, Taiwan, October 1-3, 2007
[28]Y. Lai and N. S. Cordero, “Thermal Management of Bright LED for Automotive Application,” Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems. EuroSimE 2006, Piscataway, NJ, USA, April 24-26, 2006
[29]L. Kim, J. H. Choi, S. H. Jang and M. W. Shin, “Thermal Analysis of LED Array System with Heat Pipe,” Thermochimica Acta, Volume 455, No. 1-2, pp. 21-25, April 2007
[30]Y. C. Hsu, Y. K. Lin, M. H. Chen, C. C. Tsai, J. H. Kuang, S. B. Huang, H. L. Hu, Y. I. Su and W. H. Cheng, “Failure Mechanisms Associated With Lens Shape of High-Power LED Modules in Aging Test,” IEEE Transactions on Electron Devices, Volume 55, No. 2, pp. 689-94, February 2008
[31]M. Shatalov, A. Chitnis, P. Yadav, Md. F. Hasan, J. Khan, V. Adivarahan, H. P. Maruska, W. H. Sun and M. Asif Khan, “Thermal Analysis of Flip-Chip Packaged 280nm Nitride-Based Deep Ultraviolet Light-Emitting Diodes,” Applied Physics Letters, Volume 86, No. 20, pp. 201109-3, May 2005
[32]C. Tsou, Y. S. Huang and G. W. Lin, “Silicon-Based Packaging Platform for Light Emitting Diode,” 6th International Conference on Electronics Packaging Technology, Shenzhen, China, August 30-31, 2005
[33]R. F. Guan, D. L. Tian, X. Wang, and W. Q. Zhao, “Thermal, Mechanical Optical Analysis of SiC-based LED,” 10th Electronics Packaging Technology Conference, Singapore, December 9-12, 2008
[34]Q. Cheng, “Thermal Management of High-power White LED Package,” International Conference on Electronic Packaging Technology, Shanghai, China, August 14-17, 2007
[35]S. Todoroki, M. Sawai and K. Aiki, “Temperature Distribution along The Striped Active Region in High Power GaAlAs Visible Lasers,” Journal of Applied Physics, Volume 58, No. 3, pp. 1124-8, August 1985
[36]H. I. Abdelkader, H. H. Hausien and J. D. Martin, “Temperature Rise and Thermal Rise-Time Measurements of a Semiconductor,” Review of Scientific Instruments, Volume 63, No. 3, pp. 2004-7, March 1992
[37]S. Murata and H. Nakada, “Adding a Heat Bypass Improves the Thermal Characteristics of a 50μm Spaced 8-Beam Laser Diode Array,” Journal of Applied Physics, Volume 72, No. 6, pp. 2514-16, September 1992
[38]D. C. Hall, L. Goldberg and D. Mehuys, “Technique for Lateral Temperature Profiling in Optoelectronic Devices Using a Photoluminescence Microprobe,” Applied Physics Letters, Volume 61, No. 4, pp. 384-6, July 1992
[39]P. W. Epperlein and G. L. Bona, “Influence of the Vertical Structure on the Mirror Facet Temperature of Visible GaInP Quantum Well Lasers,” Applied Physics Letters, Volume 62, No. 24, pp. 3074-6, June 1993
[40]Y. Xi and E. F. Schubert, “Junction –Temperature Measurement in GaN Ultraviolet Light-Emitting Diodes Using Diode Forward-Voltage Method,” Applied Physics Letters, Volume 85, No. 12, pp. 2163-5, September 2004
[41]Z. Ma, X. Zheng, W. Liu, X. Lin and W. Deng, “Fast Thermal Resistance Measurement of High Brightness LED,” 6th International Conference on Electronics Packaging Technology, Shenzhen, China, August 30-31, 2005
[42]S. L. Kuo, C. K. Liu, M. J. Dai, C. K. Yu, H. C. Chien, and C. Y. Hsu, “Characteristic of Thermal Resistance for High Power LED,” 10th Electronics Packaging Technology Conference, Singapore, December 9-12, 2008
[43]陳隆建， 發光二極體之原理與製程，全華圖書，2006
[44]施敏， 半導體元件物理與製作技術，第二版，國立交通大學出版社，2002
[45]S. M. Sze and Kwok K. NG, “Physics of Semiconductor Devices,” Third edition, Wiley-Interscience, 2006
[46]E. F. Schubert, Light Emitting Diodes, 2nd, 2006
[47]M. Planck, The Theory of Heat Radiation, Dover Publications, New York, 1959
[48]D. A. Steiqerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin and S. L. Rudaz, “Illumination with Solid State Lighting Technology,” IEEE Journal of Selected Topics in Quantum Electronics, Volume 8, No. 2, pp. 310-20, March 2002
[49]J. P. Holman, Heat Transfer, 9th, McGraw-Hill, Inc, 2002
[50]F. P. Incropera and D. P. DeWitt, Fundamentals of Heat and Mass Transfer, 5th, Wiley, 2002
[51]W. H. McAdams, Heat Transmission, 3th, 1954
[52]D. W. van de Pol and J. K. Tierney, “Free Convection Heat Transfer from Vertical Fin-Arrays,” IEEE Transactions on Parts, Hybrids and Packaging, Volume PHP-10, No. 4, December 1974
[53]J. R. Waldrop, K. C. Wang, and P. M. Asbeck, “Determination of Junction Temperature in AlGaAs/GaAs Heterojunction Bipolar Transistors by Electrical Measurement,” IEEE Transactions on Electron Devices, Volume 39, No. 5, pp. 1248-1250, May 1992
[54]M. K. Yeh and Y. L. Huang, “Thermal analysis and optimal design of lamp type light-emitting diodes,” Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an, Volume v 31, No.n 2, pp. 271-278, March 2008
[55]W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett., Volume 75, pp. 1360-1362, 1999.
[56]T. Ueda, M. Ishida, and M, Yuri, “Laser lift-off of very thin AlGaN film sapphire using selective decomposition of GaN Interlayer,” Appl. Surface Science, Volume 216, pp. 512-518, 2003.
[57]R. F. Guan, D. L. Tian, X. Wang, and W. Q. Zhao, “Thermal, Mechanical and Optical Analysis of SiC-based LED,” 10th Electronics Packaging Technology Conference, Singapore, December 9-12, 2008.