本實驗利用浸泡硝酸氧化法在多晶矽晶片上成長氧化矽後，並搭配有氧氣環境下的高溫退火(熱氧化)再成長出超薄熱氧化矽用以表面鈍化，並討論不同溫度下退火的少數載子壽命，來尋找最佳的退火參數，而我們也比較了有無浸泡硝酸的矽晶片在高溫退火後，在大氣環境下隨時間的衰減程度，並使用電致發光(EL)量測，來得知預先硝酸氧化處理的優點，而藉由此方法我們有效提高了業界產線片的轉換效率。

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