此論文中，主要目的為利用低電感高密度電漿與電漿輔助化學氣相沉積（LIA ICP-CVD）系統沉積出高品質的非晶與多晶矽薄膜來製作SPA結構薄膜太陽能電池。我們發現，氫稀釋98%，矽甲烷2 sccm，氫氣98 sccm可以得到較高結晶率的多晶矽薄膜，此外，製成前將基板置於高溫350℃真空環境中加熱30分鐘，也可有效的升高結晶率，目前得到最高結晶率的多晶矽薄膜為82.63 %，此為沉積於玻璃基板上的結果。加入磷化氫氣體製作n型摻雜多晶矽薄膜，目前可得最高電導為1.916 Ω-1-cm-1。將氫稀釋調低至77 %，再利用低功率1500W，低溫200℃的環境可製備出非晶矽薄膜，目前可得最高能隙為1.75 eV。加入乙硼烷氣體沉積p型摻雜非晶矽薄膜，目前可得最高能隙為1.705 eV，而電導為0.315 Ω-1-cm-1。SPA結構為一單一異質結，吸收層包含了多晶與非晶矽薄膜，利用品質較好的薄膜製備出SPA結構太陽能電池，若無經過任何後處理，目前可達最高轉換效率為2.4 %，若利用交通大學更高品質的p型非晶與本質非晶薄膜，轉換效率可達3.24%。

In this thesis, device quality amorphous silicon and polycrystalline silicon thin films were investigated for fabricating SPA solar cells by using ICP-CVD with internal low-inductance antenna (LIA). For polycrystalline silicon thin films, we observed that 98% of hydrogen dilution ratio with a SiH4 flow rate of 2 sccm and H2 flow rate of 98 sccm are suitable. Furthermore, higher power of 3000 W and higher temperature of 400℃ and 10mT process pressure increased the crystalline volume fraction Xc of poly-Si films. Annealing the substrates at 350℃ in vacuum chamber for 30 minutes before depositing the films also could enhance the quality of poly-Si film and the highest Xc obtained was 82.63% on the glass substrate. The highest conductivity of n-type poly-Si thin-film which was obtained with the doping gas PH3 diluted in 99% H2, was1.916 Ω-1-cm-1. Hydrogenated amorphous silicon films were fabricated by tuning the process parameters to lower power of 1500 W, lower temperature of 200℃, and lower hydrogen dilution of 77%, and the band gap obtained was 1.75 eV, and the Raman spectra of this film showed a peak at 480cm-1. In the case of p-type amorphous silicon thin films, the conductivity obtained was 0.315 Ω-1-cm-1. For the highest band gap of 1.705 eV with the doping gas B2H6 diluted in 99.5% H2. We fabricated the single heterojunction thin-film Si solar cell with poly-Si and a-Si:H absorber layers (SPA) and the highest efficiency of 2.4 % was obtained. After replacing the p-type amorphous layer and absorber amorphous layer with higher band gap deposited in NTCU, efficiency improved to 3.24 %.

References
[1] Ghittick R. C., Alexander J. H., Sterling H F. j, Electrochem Soc., 116: 77,
1969.
[2] P. E. Vanier, F. J. Kampas, R. R. Corderman, and G. Rajeswaran “A study of hydrogenated amorphous silicon deposited by rf glow discharge in silane‐hydrogen mixtures ”, J. Appl. Phys. 56, 1812 (1984)
[3] A. Matsuda and T. Goto, Mater. Res. Soc. Proc. 164 (1990) 3.
[4] J. Perrin, Y. Takeda, N. Hitano, Y. Takeuchi, and A. Matsuda, Surf. Sci. 210 (1989) 114.
[5] John Robertson. “Growth mechanism of hydrogenated amorphous silicon”, journal of non crystalline solids, 2000,266:79.
[6] B. Mehta and M. Tao. “A Kinetic Model for Boron and Phosphorus Doping in Silicon Epitaxy by CVD“, Journal of The Electrochemical Society, 152 (4) (2005)
[7] Guha S, in Street R, Ed, Technology and Applications of Amorphous Silicon, 252–305, Springer,Berlin (1999). Figure 6.10 of this paper is a valuable compilation of power measurements for varying cell thicknesses and light-soaking histories.
[8] Guha S, Yang J, Banerjee A, Glatfelter T, Hoffman K, Xu X, Technical Digest – 7th International Photovoltaic Science and Engineering Conference (PVSEC-7), 43 (Nagoya, Japan, 1993).
[9] P. Alpuim, V. Chu, and J. P. Conde , “Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor deposition”, J. Appl. Phys. 86, 3812 (1999).
[10] A. Matsuda ,” Growth mechanism of microcrystalline silicon obtained from reactive plasmas”, Thin Solid Films 337 (1999).
[11 ] S. Veprek, Z. Iqbal, F.A. Sarott, Phil. Mag. B 45 137, 1982.

[12] Vetterl O, Finger F, Garius R etc., Sol Energy Mater Sol Cells, 62: 97, 2000.
[13]. Yamamoto K, Suzuki T, Yoshimi M, Nakaijima A, Jpn. J. Appl. Phys. 36, L569 (1997).
[14]. Yamamoto K et al., Proc. 26th IEEE Photovoltaic Specialists Conf., 575 (Anaheim, CA, 1997).
[15] AL & SH “Handbook of photovoltaic science and engineering”, December 2, 2002.