本研究藉由可商用化之SiGe BiCMOS技術提出新型影像感測器之像素及相對應讀出電路設計，不同於傳統CMOS影像感測器必須經由一段積分時間讀取像素的電壓變化，新型感測像素藉由每列的自然對數放大器，可直接將大範圍電流值作轉換成所要求之範圍電壓值輸出，其中像素架構是由SiGe BC 接面兩極體以及行選擇開關組成，利用TSMC 0.35μm SiGe BiCMOS所提供的像素樣本已經驗証符合設計所需之特性，並配合SiGe HBT所設計的列放大器，影像感測器可獲得高動態偵測範圍至少132.2dB(光電流範圍為10pA~40.7uA)，且在低照度的感測靈敏度可到0.01 lux。

The novel pixel structures and their corresponding readout circuit design for image sensors in commercial SiGe BiCMOS technologies are presented in this work. Unlike conventional CMOS imagers which have to sense the pixel voltage drop after some integration time, the new pixel directly outputs the sensed photo-current to a natural logarithmic column amplifier for wide dynamic range I-to-V conversion. The pixel structure includes a photo-detector made of SiGe BC diode and a row select switch only. Samples fabricated in standard TSMC 0.35μm SiGe BiCMOS technology verified the feasibility of the design. Along with the column amplifier made of SiGe HBT’s, the imager exhibits a very wide sensing dynamic range of at least 132.2 dB(range of photocurrent is 10pA~40.7uA) and a sensitive detection for low illuminance down to 0.01 lux.

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