簡易檢索 / 詳目顯示
| 研究生： |
李國榮 Kuo-Jung Lee |
|---|---|
| 論文名稱： |
1550 nm之共振腔發光二極體之研製與分析 Fabrication and Characterization of 1550 nm Resonant-Cavity Light-Emitting Diodes(RCLEDs) |
| 指導教授： |
吳孟奇
Meng-Chyi Wu |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering |
| 論文出版年： | 2006 |
| 畢業學年度： | 94 |
| 語文別： | 中文 |
| 論文頁數： | 63 |
| 中文關鍵詞： | 共振腔 、1550 nm 、InGaAsP 、布拉格反射鏡 |
| 相關次數： | 點閱：2 下載：0 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
本論文的主要研究是設計、製作、以及特性量測發光波段在1550 nm的共振腔發光二極體( Resonant Cavity Light Emitting Diode, RCLED )。RCLED 磊晶片的活性層是由厚度為5 nm 的In0.73Ga0.27As0.85P0.15量子井組成，放射波長峰值約在1530 nm 附近，上下夾著反射率大於99 % 的AlInAs / AlGaInAs 布拉格反射鏡。實驗結果顯示窗口尺寸為10 μm 的1550 nm RCLED 元件在20 °C、20 mA 時有順向偏壓2.1 V ，最大的光輸出功率130 μW 和最大的量子效率4.6 % 。注入電流增加與溫度上升所導致增益峰值紅移的變化量分別為0.08 nm/mA 以及0.4 nm/℃。從而可得到溫度與注入電流之關係為0.2 mA/℃。
In this thesis,we designed,fabricated and characterized the resonant-cavity light emitting diodes ( RCLED ) emitting at 1550 nm wavelength.The strained multi-quantum-well ( SMQW ) active region consisting of five 5 nm thick In0.73Ga0.27As0.85P0.15 quantum wells with an emission peak wavelength near 1530 nm,sandwiched between two AlInAs / AlGaInAs DBRs which yielding a reflectivity greater than of 99 %. The experimental results indicated that the 10−µm window diameters for the 1550 nm RCLEDs have a forward voltage (VF) of 2.1 V at a current of 20 mA at 20 °C,which the maximum light output power of 130 μW and highest external quantum efficiency of 4.6 %. The increases of injected current and temperature lead to a red shift at a rate of 0.08 nm/mA and 0.4 nm/℃ for the gain peak.From that we could get the relationship between temperature and injected current is 0.2 mA/℃.
[1] Schnitzer I., Yablonovitch E., Caneau C., Gmitter T. J. and Scherer A.,“30 % external quantum efficiency from surface textured, thin−film light−emitting diodes, ” Appl. Phys. Lett., vol.63, pp. 2174, 1993.
[2] Windisch R., Heremans P., Dutta B., Kuijk M., Schoberth S., Kiesel. P, Dohler. F. H and Borghs. G, “ High−efficiency non−resonant cavity light−emitting diodes, ” Electr. Lett., vol.34, no.8, pp.1153 , 1998.
[3] E. F. Schubert, Y.-H. Wang, A. Y. Cho, L.-W. Tu, and G. J. Zydzik,“ Resonant cavity light−emitting diode, ” Appl. Phys. Lett., vol. 60, no.8, pp. 921−923, 1992.
[4] E. F. Schubert, Hunt N. E. J., Malik. R. J., Micovic M. and Miller D. L.,“ Temperature and modulation characteristics of resonant−cavity light−emitting diodes, ” J. Lightw. Technol.,vol. 14, pp. 1721, 1996.
[5] Bockstaele R., Sys C., Blondelle J., De Neve H., Dhoedt B., Moerman I., Van Daele P. and Baets R., 1997, “ Micro−cavity LED’s with an overall efficiency of 4 % into a numerical aperture of 0.5 μm ” LEOS Summer Topicals, Montreal, Camada, p. 69.
[6] P. Modak, M. D’Hondt, I. Moerman, P. Van Daele, P. Mijlemans, and P.Demeester,“ 5.2 % efficiency InAlGaP microcavity LED’s at 640 nm on Ge substrates, ” Electr. Lett., vol.37, no. 6, pp. 377−378, 2001.
[7] R.Wirth, C. Karnutsch, S. Kugler, S. Thaler, and K. Streubel, “ Red and orange resonant cavity LEDs, ” in Proc. SPIE Light−Emitting Diodes: Research, Manufacturing, and Applications V, vol. 4278, 2001.
[8] S. Orsila, T. Leinonen, P. Uusimaa, M. Saarinen, M. Guina, P. Sipila, V. Vilokkinen, P. Melanen, M. Dumitrescu, and M. Pessa, “ Resonant cavitylight−emitting diodes grown by solid source MBE, ” J. Cryst. Growth,vol. 227−228, pp. 346−351, 2001.
[9] J. W. Gray, Y. S. Jalili, P. N. Stavrinou, M. Whitehead, G. Parry, A. Joel, R. Robjohn, R. Petrie, S. Hunjan, P. Gong, and G. Duggan, “ High efficiency,low voltage resonant-cavity light-emitting diodes operating around 650 nm, ” Electr. Lett., vol. 36, no. 20, pp.1730−1731, 2000.
[10] J. S. Blakemore, “ Semiconductor and other major properties of gallium arsenide, ” J. Appl. Phys.,56,10,pp R123−R181,1992.
[11] K. Streubel, U. Helin, V. Oskarsson, E. Backlin, A. Johansson, IEEE Photonics Technol. Lett., 10 (12) (1998) 1685.
[12] T. Takamori, A. R. Pratt, T. Tamijoh, Appl. Phys. Lett., 74 (24)(1999) 3598.
[13] Marko Jalonen, Jukka K¨ong¨as, Mika Toivonen, Pekka Savolainen, Arto Salokatve, and Markus Pessa,“Monolithic super−bright red resonant cavity light−emitting diode grown by solid source molecular beam epitaxy, ” IEEE Photonics Technol. Lett.,Vol. 10, NO. 7, JULY 1998.
[14] K. Streubel, Member, IEEE, U. Helin, V. Oskarsson, E. B¨acklin, and ° A. Johansson,“High brightness visible (660 nm) resonant-cavity light-emitting diode, ” IEEE Photonics Technol. Lett., VOL. 10, NO. 12, DECEMBER 1998.
[15] H. De Neve, J. Blondelle, R. Baets, P. Demeester, P. Van, Daele, and G. Borghs, “High efficiency planar microcavity LED’s : Comparison of design and experiment, ” IEEE Photonics Technol. Lett., vol. 7, pp. 287–289, 1994.
[16] J. Blondelle, H. De Neve, P. Demeester, P. Van Daele, G. Borghs, and R. Baets,“6 % external quantum efficiency from InGaAs/(Al)GaAs single quantum well planar microcavity LEDs, ” Electr. Lett., vol. 30, pp.1787−1789, 1994.
[17] K. Hild, T. E. Sale, T. J. C. Hosea, M. Hirotani, Y. Mizuno, and T. Kato, “ Spectral and thermal properties of red AlGaInP RCLEDs for polymer optical fiber applications,” IEE Proc. Optoelectr., vol. 148, pp. 220−224, 2001.
全文公開日期 本全文未授權公開 (校內網路)全文公開日期 本全文未授權公開 (校外網路)