論文提出由金屬表面電漿模態(surface plasmon mode)結構增強熱載子(hot carrier)注入矽材料的蕭特基(Schottky)雪崩光增益二極體(avalanche photodiodes)，由於其元件設計理念與分離式－吸收－電荷－倍增之累增崩潰光二極體(separate absorption-charge-multiplication avalanche photodiodes, SACM APD)的概念十分相同，為此我們也稱其為Si SACM Schottky avalanche photodiodes．此設計理念藉用表面電漿模態對其光學響應將共振子轉換為熱載子，並將其萃取出注入至矽光二極體內，再經有矽光二極體操作在雪崩效應(avalanche effect)條件下，將熱載子訊號放大，以實現矽材料光偵測器對於近紅外偵測的可能性．而對於熱載子極低的光轉電響應度(Primary Responsivity A/W)~100uA/W，藉由高增益的條件下，達到在不同近紅外光波長下放大到44.25mA/W (1260nm)與 32.1mA/W(1550nm)。我們成功實現過去沒有人提出的方式，來實現矽材料光偵測器對近紅外光偵測可能從未有過的最高響應度．

This thesis proposes using surface plasma resonance (SPR) to enhance hot carrier generation and injection into Si Schottky avalanche photodiodes for near IR detection. These photodiodes are also called “Si SACM Schottky avalanche photodiodes”, owing to a similar device concept of separate absorption-charge-multiplication avalanche photodiodes, SACM APDs, which is commonly seen in semiconductor detectors. With this idea, the optically excited surface plasma turn into hot carriers through the SPR mode. Then, the hot carriers are injected into a Si PIN photodiode and initiate a multiplied photocurrent via the avalanche effect. This process enables the possibility of implementing a Si photodetector for detecting light extended into the NIR spectrum. According to the experimental results, the originally extremely low photoresponse of photogenerated hot carrier injection (~100uA/W) can be amplified to 44.25mA/W (1260nm) and 32.1mA/W (1550nm) in different NIR bands under the high-gain operation. In summary, we presented a Si photodetector which can achieve a record high response in NIR.

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