紅外線感測器分為量子型與熱型。其中熱型紅外線感測器具有可在室溫下操作的功能，且比量子型更具有經濟價值。在本論文中，一個新式的熱電式紅外線感測器被以TSMC 0.35 Mixed-Signal 2P4M CMOS與微機電製程所實現，本感測器具有高填置率(85%)，低雜訊等效溫差(0.0069K)和高感測度(5.83×10+7 cm Hz1/2/W) 。再者，一個CMOS差分式感測電路被成功地設計且與感測器一同整合在一顆晶片，使整個感測系統更加輕便且藉由IC製程大量生產後使得成本可以更低廉。

Infrared detectors include both the quantum type and the thermal type. Thermal type infrared detectors can be operated at room temperature and are more economical than the quantum type since they do not need an extra cryogenic cooling system. In this thesis, CMOS IC processes with MEMS technique is used to implement a novel thermal type infrared detector which can obtain a high fill factor, high detectivity, and a low NETD (Noise equivalent temperature difference) value. Furthermore, a differential type sensing circuit has been designed and simulated by using HSpice software. For a thermoelectric detector FPA (Focal Plane Array), a readout circuit using Verilogger software is designed and simulated. The designed infrared detector has been successfully fabricated by TSMC 0.35 Mixed-Signal 2P4M CMOS process through CIC, and the measurement system has been set up to verify the feasibility of the designed in infrared detector. A novel infrared detector with low NETD value (0.0069K), high detectivity value (5.83×10+7 cm Hz1/2/W) and high fill factor (0.85) has been found in this research.

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