奈米碳管在結構上具有特殊的準一維結構、熱穩定性、還有奈米尺度下的高導電特性，具有極大的潛力應用於未來的奈米電子元件以及奈米生醫元件上。本研究分別探討IgG分子吸附在奈米碳管二極元件的表面對於奈米碳管的電性以及拉曼特徵光譜產生的影響。利用製作出來的單根奈米碳管二極元件可以量測出受到IgG分子附著於奈米碳管後導致的導通電流產生下降變化，與網狀奈米碳管元件的偵測結果1 pM下產生1%的變化相比，本研究可以達到31.25 pM下變化量最高可以達到38.9%。在濃度極低的情況下，辨識率大幅提高，應用於奈米生醫的生物分子檢測技術，能夠幫助疾病之提早發現以及診斷治療。使用三層催化劑結構，利用高溫氣相化學沉積(Thermal Chemical Vapor Deposition , Thermal CVD)的方式側向成長平貼於矽基板上的高品質單壁奈米碳管(Single-Walled Carbon nanotube , SWCNT)，並且製做成奈米碳管二極元件，不僅減少製作元件的程序，與奈米碳管溶液旋塗法比較，能有效定位奈米碳管並且利用奈米碳管成長參數來控制奈米碳管的密度、長度以及直徑，也不需要高溫退火來改善奈米碳管與電極金屬之間的接觸阻抗。
拉曼特徵譜線是一種非破壞性的量測方法，利用雷射照射於奈米碳管表面使得分子產生共振，並且比較入射光以及散射光之能量差異得到特徵譜線，可以量測出奈米碳管之RBM、D-band、G-band的訊號強弱來得知奈米碳管的品質好壞以及是否為單壁的結構，與電流量測相比，量測快速，可以節省製作成元件的繁複製程。而研究的實驗結果得出當IgG分子吸附於單壁奈米碳管的表面時，奈米碳管拉曼特徵光譜之G-band位置並不會具有固定方向平移的趨勢以及平移程度，而G-band/SiO2 的比值強弱之變化，整體比值曲線雖然隨著IgG分子數量增加，使得散射光強度減弱，造成的比值下降的趨勢，但是強度比值的下降幅度並沒有固定，因此尚無法利用此比值的下降幅度做IgG分子的定量分析。

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